A manufacturing method of a package structure includes at least the following steps. A plurality of conductive connectors are formed on a circuit layer. The circuit layer includes a central region and a peripheral region electrically connected to the central region. A chip is disposed on the central region of the circuit layer. The chip includes an active surface at a distance from the circuit layer and a sensing area on the active surface. An encapsulant is formed on the circuit layer to encapsulate the chip and the conductive connectors. A redistribution layer is formed on the encapsulant to electrically connect the chip and the conductive connectors. The redistribution layer partially covers the chip and includes a window corresponding to the sensing area of the chip. A package structure is also provided.

A manufacturing method of a package structure includes at least the following steps. A plurality of conductive connectors are formed on a circuit layer. The circuit layer includes a central region and a peripheral region electrically connected to the central region. A chip is disposed on the central region of the circuit layer. The chip includes an active surface at a distance from the circuit layer and a sensing area on the active surface. An encapsulant is formed on the circuit layer to encapsulate the chip and the conductive connectors. A redistribution layer is formed on the encapsulant to electrically connect the chip and the conductive connectors. The redistribution layer partially covers the chip and includes a window corresponding to the sensing area of the chip. A package structure is also provided.

A bonding member (10) includes surface-processed silver surfaces (11a, 11b).

Provided is a photocurable and thermosetting adhesive for inkjet which can increase the thickness accuracy of an adhesive layer formed by curing an adhesive and can further cause the adhesive layer to hardly generate voids.

A photocurable and thermosetting adhesive for inkjet according to the present invention contains a photocurable compound, a thermosetting compound, a photopolymerization initiator, and a thermal curing agent, wherein the elastic modulus at 25 C. of a B-staged adhesive is at least 5.010.sup.2 Pa and at most 8.010.sup.4 Pa when the B-staged adhesive is obtained by irradiating the adhesive with light of a cumulative light quantity of 1000 mJ/cm.sup.2 so that illumination at a wavelength of 365 nm is 100 mW/cm.sup.2.

Provided is a photocurable and thermosetting adhesive for inkjet which can increase the thickness accuracy of an adhesive layer formed by curing an adhesive and can further cause the adhesive layer to hardly generate voids.

A photocurable and thermosetting adhesive for inkjet according to the present invention contains a photocurable compound, a thermosetting compound, a photopolymerization initiator, and a thermal curing agent, wherein the elastic modulus at 25 C. of a B-staged adhesive is at least 5.010.sup.2 Pa and at most 8.010.sup.4 Pa when the B-staged adhesive is obtained by irradiating the adhesive with light of a cumulative light quantity of 1000 mJ/cm.sup.2 so that illumination at a wavelength of 365 nm is 100 mW/cm.sup.2.

This invention relates to a method for bonding of a first contact area of a first at least largely transparent substrate to a second contact area of a second at least largely transparent substrate, on at least one of the contact areas an oxide being used for bonding, from which an at least largely transparent interconnection layer is formed with an electrical conductivity of at least 10e1 S/cm.sup.2 (measurement: four point method, relative to temperature of 300K) and an optical transmittance greater than 0.8 (for a wavelength range from 400 nm to 1500 nm) on the first and second contact area.

This invention relates to a method for bonding of a first contact area of a first at least largely transparent substrate to a second contact area of a second at least largely transparent substrate, on at least one of the contact areas an oxide being used for bonding, from which an at least largely transparent interconnection layer is formed with an electrical conductivity of at least 10e1 S/cm.sup.2 (measurement: four point method, relative to temperature of 300K) and an optical transmittance greater than 0.8 (for a wavelength range from 400 nm to 1500 nm) on the first and second contact area.

An anisotropic conductive film has a first insulating resin layer and a second insulating resin layer. The first insulating resin layer is formed of a photopolymerized resin, the second insulating resin layer is formed of a thermo-cationically or thermo-anionically polymerizable resin, a photo-cationically or photo-anionically polymerizable resin, a thermo-radically polymerizable resin, or a photo-radically polymerizable resin, and conductive particles for anisotropic conductive connection are disposed in a single layer on a surface of the first insulating resin layer on a side of the second insulating resin layer. The elastic modulus of the anisotropic conductive film as a whole is 0.13 MPa or more.

An anisotropic conductive film has a first insulating resin layer and a second insulating resin layer. The first insulating resin layer is formed of a photopolymerized resin, the second insulating resin layer is formed of a thermo-cationically or thermo-anionically polymerizable resin, a photo-cationically or photo-anionically polymerizable resin, a thermo-radically polymerizable resin, or a photo-radically polymerizable resin, and conductive particles for anisotropic conductive connection are disposed in a single layer on a surface of the first insulating resin layer on a side of the second insulating resin layer. The elastic modulus of the anisotropic conductive film as a whole is 0.13 MPa or more.

Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.