Provided in a semiconductor package substrate including a semiconductor chip including a connection pad, an encapsulant encapsulating at least a portion of the semiconductor chip, a connection member disposed on the semiconductor chip and the encapsulant, the connection member including a redistribution layer that is electrically connected to the connection pad, a first passivation layer disposed on the connection member, and an adhesive layer disposed on at least one of a top surface of the encapsulant and a bottom surface of the first passivation layer in a region outside of the semiconductor chip.

A transition device for a flexible device and a production method therefor, and a method for fabricating a flexible device are provided. The transition device includes a functional component and a transition base. The functional component has a first surface for mounting with a base and a second surface opposite to the first surface, and the transition base is bonded to the second surface of the functional component by an adhesive layer.

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a circuit carrier, a dielectric layer, a conductive terminal, a semiconductor die, and an insulating encapsulation. The circuit carrier includes a first surface and a second surface opposite to each other, a sidewall connected to the first and second surfaces, and an edge between the first surface and the sidewall. The dielectric layer is disposed on the first surface of the circuit carrier and extends to at least cover the edge of the circuit carrier. The conductive terminal is disposed on and partially embedded in the dielectric layer to be connected to the circuit carrier. The semiconductor die encapsulated by the insulating encapsulation is disposed on the second surface of the circuit carrier and electrically coupled to the conductive terminal through the circuit carrier.

A package structure in accordance with some embodiments may include an RFIC chip, a redistribution circuit structure, a backside redistribution circuit structure, an isolation film, a die attach film, and an insulating encapsulation. The redistribution circuit structure and the backside redistribution circuit structure are disposed at two opposite sides of the RFIC chip and electrically connected to the RFIC chip. The isolation film is disposed between the backside redistribution circuit structure and the RFIC chip. The die attach film is disposed between the RFIC chip and the isolation film. The insulating encapsulation encapsulates the RFIC chip and the isolation film between the redistribution circuit structure and the backside redistribution circuit structure. The isolation film may have a coefficient of thermal expansion lower than the insulating encapsulation and the die attach film.

An electronic system supports superior coupling by implementing a communication mechanism that provides at least for horizontal communication for example, on the basis of wired and/or wireless communication channels, in the system. Hence, by enhancing vertical and horizontal communication capabilities in the electronic system, a reduced overall size may be achieved, while nevertheless reducing complexity in printed circuit boards coupled to the electronic system. In this manner, overall manufacturing costs and reliability of complex electronic systems may be enhanced.

Provided in a semiconductor package substrate including a semiconductor chip including a connection pad, an encapsulant encapsulating at least a portion of the semiconductor chip, a connection member disposed on the semiconductor chip and the encapsulant, the connection member including a redistribution layer that is electrically connected to the connection pad, a first passivation layer disposed on the connection member, and an adhesive layer disposed on at least one of a top surface of the encapsulant and a bottom surface of the first passivation layer in a region outside of the semiconductor chip.

A semiconductor package includes a package substrate, an interposer on the package substrate, and a first semiconductor device and a second semiconductor device on the interposer, the first and second semiconductor devices connected to each other by the interposer, wherein at least one of the first semiconductor device and the second semiconductor device includes an overhang portion protruding from a sidewall of the interposer.

IC package including a material preform comprising graphite. The material preform may have a thermal conductivity higher than that of other materials in the package and may therefore mitigate the formation of hot spots within an IC die during device operation. The preform may have high electrical conductivity suitable for EMI shielding. The preform may comprise a graphite sheet that can be adhered to a package assembly with an electrically conductive adhesive, applied, for example over an IC die surface and a surrounding package dielectric material. Electrical interconnects of the package may be coupled to the graphite sheet as an EMI shield. The package preform may be grounded to a reference potential through electrical interconnects of the package, which may be further coupled to a system-level ground plane. System-level thermal solutions may interface with the package-level graphite sheet.

Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra fine pitch (e.g., a pitch that is greater than or equal to 150 m, etc.); (ii) a large die to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.

An integrated circuit (IC) package comprises a substrate comprising a dielectric and a thermal conduit that is embedded within the dielectric. The thermal conduit has a length that extends laterally within the dielectric from a first end to a second end. An IC die is thermally coupled to the first end of the thermal conduit. The IC die comprises an interconnect that is coupled to the first end of the thermal conduit. An integrated heat spreader comprises a lid over the IC die and at least one sidewall extending from the edge of the lid to the substrate that is thermally coupled to the second end of the thermal conduit.