A semiconductor device including: a semiconductor element; and a first electrode formed on a first surface of the semiconductor element. The first electrode has a stacked structure including a first electroless Ni plating layer. The first electroless Ni plating layer contains nickel (Ni) and phosphorus (P) as a composition. A phosphorus (P) concentration of the first electroless Ni plating layer is 2.5 wt % to 6 wt % inclusive, and a crystallization rate of Ni.sub.3P in the first electroless Ni plating layer is 0% to 20% inclusive.

A semiconductor device including: a semiconductor element; and a first electrode formed on a first surface of the semiconductor element. The first electrode has a stacked structure including a first electroless Ni plating layer. The first electroless Ni plating layer contains nickel (Ni) and phosphorus (P) as a composition. A phosphorus (P) concentration of the first electroless Ni plating layer is 2.5 wt % to 6 wt % inclusive, and a crystallization rate of Ni.sub.3P in the first electroless Ni plating layer is 0% to 20% inclusive.

A semiconductor wafer support arrangement and method for processing a semiconductor wafer including an adhesive sheet may comprise: a layer of wafer supporting adhesive that has certain characteristics that permit wafer processing, e.g., wafer thinning, and removal of the processed wafer in condition for use without cleaning. The carrier or substrate for the wafer processing may be reusable, and the adhesive sheet may have plural layers and may include a flexible substrate.

A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

A semiconductor package includes a semiconductor chip having an active surface on which a connection pad is disposed and an inactive surface opposite to the active surface, a heat-dissipating member, including graphite, which is disposed on the inactive surface of the semiconductor chip; an encapsulant sealing at least a portion of each of the semiconductor chip and the heat-dissipating member, and a connection structure, which includes a redistribution layer electrically connected to the connection pad, disposed on the active surface of the semiconductor chip, and at least a side surface of the heat-dissipating member is coplanar with a side surface of the semiconductor chip.

A semiconductor package includes a semiconductor chip having an active surface on which a connection pad is disposed and an inactive surface opposite to the active surface, a heat-dissipating member, including graphite, which is disposed on the inactive surface of the semiconductor chip; an encapsulant sealing at least a portion of each of the semiconductor chip and the heat-dissipating member, and a connection structure, which includes a redistribution layer electrically connected to the connection pad, disposed on the active surface of the semiconductor chip, and at least a side surface of the heat-dissipating member is coplanar with a side surface of the semiconductor chip.

A semiconductor device includes a first semiconductor element, a first connection terminal formed on a lower surface of the first semiconductor element, a second semiconductor element mounted on the lower surface of the first semiconductor element so that the second semiconductor element partially overlaps the first semiconductor element in plan view, a second connection terminal formed on a lower surface of the second semiconductor element, and a wiring substrate on which the first and second semiconductor elements are mounted. The wiring substrate includes first and second connection pads electrically connected to the first connection terminal and the second connection terminal, respectively. The semiconductor device further includes a third connection terminal formed on the first connection pad and electrically connected to the first connection terminal. One of the first connection terminal and the third connection terminal is a metal post, and the other is a solder ball.

A semiconductor device includes a first semiconductor element, a first connection terminal formed on a lower surface of the first semiconductor element, a second semiconductor element mounted on the lower surface of the first semiconductor element so that the second semiconductor element partially overlaps the first semiconductor element in plan view, a second connection terminal formed on a lower surface of the second semiconductor element, and a wiring substrate on which the first and second semiconductor elements are mounted. The wiring substrate includes first and second connection pads electrically connected to the first connection terminal and the second connection terminal, respectively. The semiconductor device further includes a third connection terminal formed on the first connection pad and electrically connected to the first connection terminal. One of the first connection terminal and the third connection terminal is a metal post, and the other is a solder ball.

A semiconductor device comprises: a ceramic substrate having conductor layers on both surfaces thereof; a semiconductor element joined to the upper surface conductor layer of the ceramic substrate; a frame member arranged on the upper surface conductor layer so as to surround a side surface of the semiconductor element; and an electrode, which is joined to an upper portion of the semiconductor element via a second fixing layer, and has fitting portions on a side surface of the electrode. On an inner wall of the frame member, fitting portions to be fitted to the fitting portions of the electrode and four positioning portions extending from the inner wall of the frame member to the side surfaces of the electrode are formed.

A semiconductor device comprises: a ceramic substrate having conductor layers on both surfaces thereof; a semiconductor element joined to the upper surface conductor layer of the ceramic substrate; a frame member arranged on the upper surface conductor layer so as to surround a side surface of the semiconductor element; and an electrode, which is joined to an upper portion of the semiconductor element via a second fixing layer, and has fitting portions on a side surface of the electrode. On an inner wall of the frame member, fitting portions to be fitted to the fitting portions of the electrode and four positioning portions extending from the inner wall of the frame member to the side surfaces of the electrode are formed.