A semiconductor device includes a first semiconductor chip that includes a first conductive pad whose top surface is exposed; and a second semiconductor chip that includes a second conductive pad whose top surface is exposed and in contact with at least a portion of the top surface of the first conductive pad. The first semiconductor chip may include a first diffusion barrier in contact with a bottom surface of the first conductive pad, and a second diffusion barrier in contact with a lateral surface of the first conductive pad, and the first diffusion barrier and the second diffusion barrier may include different materials from each other.

A method of manufacturing a chip assembly comprises joining an in-process unit to a printed circuit board; reflowing a bonding material disposed between and electrically connecting the in-process unit with the printed circuit board, the bonding material having a first reflow temperature; and then joining a heat distribution device to the plurality of semiconductor chips using a thermal interface material (“TIM”) having a second reflow temperature that is lower than the first reflow temperature. The in-process unit further comprises a substrate having an active surface, a passive surface, and contacts exposed at the active surface; an interposer electrically connected to the substrate; a plurality of semiconductor chips overlying the substrate and electrically connected to the substrate through the interposer, and a stiffener overlying the substrate and having an aperture extending therethrough, the plurality of semiconductor chips being positioned within the aperture.

Multiple bonded units are provided, each of which includes a respective front-side die and a backside die. The two dies in each bonded unit may be a memory die and a logic die configured to control operation of memory elements in the memory die. Alternatively, the two dies may be memory dies. The multiple bonded units can be attached such that front-side external bonding pads have physically exposed surfaces that face upward and backside external bonding pads of each bonded unit have physically exposed surfaces that face downward. A first set of bonding wires can connect a respective pair of front-side external bonding pads, and a second set of bonding wires can connect a respective pair of backside external bonding pads.

Multiple bonded units are provided, each of which includes a respective front-side die and a backside die. The two dies in each bonded unit may be a memory die and a logic die configured to control operation of memory elements in the memory die. Alternatively, the two dies may be memory dies. The multiple bonded units can be attached such that front-side external bonding pads have physically exposed surfaces that face upward and backside external bonding pads of each bonded unit have physically exposed surfaces that face downward. A first set of bonding wires can connect a respective pair of front-side external bonding pads, and a second set of bonding wires can connect a respective pair of backside external bonding pads.

Multiple bonded units are provided, each of which includes a respective front-side die and a backside die. The two dies in each bonded unit may be a memory die and a logic die configured to control operation of memory elements in the memory die. Alternatively, the two dies may be memory dies. The multiple bonded units can be attached such that front-side external bonding pads have physically exposed surfaces that face upward and backside external bonding pads of each bonded unit have physically exposed surfaces that face downward. A first set of bonding wires can connect a respective pair of front-side external bonding pads, and a second set of bonding wires can connect a respective pair of backside external bonding pads.

Multiple bonded units are provided, each of which includes a respective front-side die and a backside die. The two dies in each bonded unit may be a memory die and a logic die configured to control operation of memory elements in the memory die. Alternatively, the two dies may be memory dies. The multiple bonded units can be attached such that front-side external bonding pads have physically exposed surfaces that face upward and backside external bonding pads of each bonded unit have physically exposed surfaces that face downward. A first set of bonding wires can connect a respective pair of front-side external bonding pads, and a second set of bonding wires can connect a respective pair of backside external bonding pads.

A semiconductor package includes a plurality of first semiconductor structures that are stacked on a package substrate and are offset from each other in a first direction, and a plurality of first adhesive layers disposed between the first semiconductor structures. Each of the first semiconductor structures includes a first sub-chip and a second sub-chip in contact with a part of a top surface of the first sub-chip. The first adhesive layers are disposed between and are in contact with the first sub-chips. The first adhesive layers are spaced apart from the second sub-chips. A thickness of each of the first adhesive layers is less than a thickness of each of the second sub-chips. The thickness of the second sub-chip is in a range of about 13 μm to about 20 μm.

A semiconductor package includes a plurality of first semiconductor structures that are stacked on a package substrate and are offset from each other in a first direction, and a plurality of first adhesive layers disposed between the first semiconductor structures. Each of the first semiconductor structures includes a first sub-chip and a second sub-chip in contact with a part of a top surface of the first sub-chip. The first adhesive layers are disposed between and are in contact with the first sub-chips. The first adhesive layers are spaced apart from the second sub-chips. A thickness of each of the first adhesive layers is less than a thickness of each of the second sub-chips. The thickness of the second sub-chip is in a range of about 13 μm to about 20 μm.

A semi-wafer level packaging method comprises the steps of providing a wafer; grinding a back side of the wafer; forming a metallization layer; removing a peripheral ring; bonding a first tape; applying a dicing process; bonding a second tape; removing the first tape; bonding a supporting structure; bonding a third tape; removing the second tape; and applying a singulation process. A semi-wafer level packaging method comprises the steps of providing a wafer; attaching a carrier wafer to the wafer; grinding a back side of the wafer; forming a metallization layer; applying a dicing process; bonding a supporting structure; removing the carrier wafer; bonding a tape; and applying a singulation process.

Embodiments of methods for producing direct bonded structures and methods for forming direct bonded structures are disclosed. The direct bonded structures may include elements comprising active electronics, microelectromechanical systems, optical elements, and so forth.