In an electronic device including an electronic component, a sealing resin body, a first member having at least a portion located in the sealing resin body, and a second member connected to the first member via a solder in the sealing resin body, the first member includes a base material formed of a metal material and a coated film at least on a surface of the base material which is adjacent to a back surface of the first member opposite to a facing surface of the first member facing the second member. The coated film includes a metal thin film on a surface of the base material and an uneven oxide film on the metal thin film and made of an oxide of a same metal as a main component of the metal thin film.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

An electronic device includes an electronic component (12), a sealing resin body (11) sealing the electronic component, and a plurality of conductive members electrically connected to the electronic component in the sealing resin body, including respective portions exposed from the sealing resin body to the outside of the sealing resin body, and having different potentials. The conductive members include an external connection terminal (14, 22, 23, 24, 25) extending from the inside of the sealing resin body to the outside of the sealing resin body. A surface of the external connection terminal has a connected part (40a) electrically connected to the electronic component, a higher adhesion part (43) having a higher adhesion to the sealing resin body, and a lower adhesion part (44) having an adhesion to the sealing resin body which is lower than that of the higher adhesion part. Each of the higher adhesion part and the lower adhesion part is a portion of the surface of the external connection terminal which is other than the connected part and covered with the sealing resin body. The lower adhesion part is provided in at least one of a connection surface (40) including the connected part and a back surface (41) opposite to the connection surface in a thickness direction to extend from an outer peripheral end of the sealing resin body along an extending direction of the external connection terminal.

A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

An emitter electrode includes a first electrode layer, a second electrode layer, and a third electrode layer. The first to third electrode layers are laid in this order on an emitter layer. A solder layer is further laid on the third electrode layer. The first electrode layer covers the emitter layer and a gate oxide film in a front surface of a semiconductor chip. A first electroconductive material forming the first electrode layer has AlSi as its main component. A second electroconductive material forming the second electrode layer has a linear expansion coefficient different from that of the first electroconductive material and is lower in mechanical strength than the first electroconductive material. A third electroconductive material constituting the third electrode layer has a linear expansion coefficient different from that of the first electroconductive material and has solder wettability higher than that of the first electrode layer.

A semiconductor device includes a wiring, a semiconductor chip above the wiring and a metal block above the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a lower electrode, an upper large electrode and an upper small electrode. The semiconductor chip includes a first portion and a second portion, the first portion being on an upper small electrode side with respect to a centroid of the semiconductor chip, the second portion being on an opposite side of the upper small electrode with respect to the centroid. The lower electrode is connected to the wiring via a lower solder layer. The lower solder layer includes a solder base material and metal particles. A volume ratio of the metal particles occupying the lower solder layer under the second portion is higher than a volume ratio of the metal particles occupying the lower solder layer under the first portion.

A semiconductor device includes a semiconductor element having a front electrode, an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and made of aluminum or aluminum alloy, and a metal member having a joint surface joined to the front electrode of the semiconductor element with solder, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, made of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate.

A method for forming a packaged electronic device includes providing a substrate comprising a lead and a pad. The method includes attaching a thermally conductive structure to the pad and attaching an electronic component to one of the thermally conductive structure or the pad. The method includes electrically coupling the electronic component to the lead, and forming a package body that encapsulates the electronic component and at least portions of the lead, the pad, and the thermally conductive structure, wherein the package body has a first major surface and a second major surface opposite to the first major surface, and one of the first bottom surface of the thermally conductive structure or the bottom surface of the pad is exposed in the first major surface of the package body.

A semiconductor die and a method for manufacturing a semiconductor die are disclosed. In an embodiment a semiconductor die includes a base body having a semiconductor material and a surface with two contact areas having contact pads at which the semiconductor die is electrically contactable and two metal caps arranged directly at the contact pads.

Provided is a compact power conversion device which is excellent in liquid tightness and has high reliability of a terminal connection portion. A power conversion device according to the present invention includes: a case that houses a power semiconductor; a flow path forming body that forms a flow path with an outer surface of the case; a first fixing material in contact with a refrigerant flowing in the flow path; and a second fixing material that is in contact with the first fixing material and the flow path forming body and covers a direction of displacement of the case of the first fixing material caused by water pressure.