A semiconductor device includes a printed wiring board; a first semiconductor module including a first package body and a first heat radiation surface on one surface of the first package body, another surface of the first package body, opposite to the first heat radiation surface, faces one face of the printed wiring board; a first heat radiator on the first heat radiation surface; a second semiconductor module including a second package body and a second heat radiation surface on one surface of the second package body, another surface of the second package body, opposite to the second heat radiation surface, faces another face of the printed wiring board; and a second heat radiator provided on the second heat radiation surface. The first and second semiconductor modules are arranged to overlap each other in a plan view. The second semiconductor module is connected in parallel to the first semiconductor module.

A semiconductor chip includes a substrate including a circuit area having a rectangular shape and a peripheral area surrounding the circuit area, a key area being overlapping a part of the circuit area and a part of the peripheral area, a plurality of drive circuit cells in the circuit area, and a conductive reference line on the peripheral area and extending in a first direction parallel to a first edge among four edges of the rectangular shape of the circuit area.

A package structure includes a first dielectric layer, semiconductor device(s) attached to the first dielectric layer, and an embedding material applied to the first dielectric layer so as to embed the semiconductor device therein, the embedding material comprising one or more additional dielectric layers. Vias are formed through the first dielectric layer to the at least one semiconductor device, with metal interconnects formed in the vias to form electrical interconnections to the semiconductor device. Input/output (I/O) connections are located on one end of the package structure on one or more outward facing surfaces thereof to provide a second level connection to an external circuit. The package structure interfits with a connector on the external circuit to mount the package perpendicular to the external circuit, with the I/O connections being electrically connected to the connector to form the second level connection to the external circuit.

A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

According to one embodiment, a semiconductor device includes a support and a stacked body on the support. The stacked body is formed of a plurality of semiconductor chips that are stacked on each other. The stacked body has a lower surface facing the support and an upper surface facing away from the support. A first wire is connected to one of the semiconductor chips in the stack and extends upward from the semiconductor chip to at least the height of the upper surface of the stacked body. A second wire is connected to the support and extends upward from the support to at least the height of the upper surface of the stacked body.

A semiconductor light emitting device includes a light emitting module, a stem, and a surrounding member. The stem includes a conductive base and a conductive heat sink extending upright from the base. The light emitting module is mounted on the heat sink. The surrounding member is arranged on the base and surrounds the light emitting module and the heat sink. The light emitting module includes a substrate mounted on the heat sink, a light emitting element mounted on the substrate, and a light emitting element drive circuit mounted on the substrate. The light emitting element drive circuit includes a transistor configured to drive the light emitting element. The transistor is a vertical MOSFET mounted on the substrate.

A semiconductor device includes first and second semiconductor elements, and first and second circuits at different potentials. The second semiconductor element, electrically connected to the first semiconductor element, relays mutual signals between the first and the second circuits, while insulating them. The semiconductor device further includes a first terminal lead electrically connected to the first semiconductor element, a first wire connected to the first and the second semiconductor elements, and a second wire connected to the first semiconductor element and the first terminal lead. The first wire contains a first metal. The second wire includes a first core containing a second metal, and a first surface layer containing a third metal and covering the first core. The second metal has a smaller atomic number than that of the first metal. The third metal has a greater bonding strength with respect to the first terminal lead than the second metal.

A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

Apparatuses relating generally to a vertically integrated microelectronic package are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface. A first microelectronic device is coupled to the upper surface of the substrate. The first microelectronic device is a passive microelectronic device. First wire bond wires are coupled to and extend away from the upper surface of the substrate. Second wire bond wires are coupled to and extend away from an upper surface of the first microelectronic device. The second wire bond wires are shorter than the first wire bond wires. A second microelectronic device is coupled to upper ends of the first wire bond wires and the second wire bond wires. The second microelectronic device is located above the first microelectronic device and at least partially overlaps the first microelectronic device.

A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.