A semiconductor chip includes a substrate including a circuit area having a rectangular shape and a peripheral area surrounding the circuit area, a key area being overlapping a part of the circuit area and a part of the peripheral area, a plurality of drive circuit cells in the circuit area, and a conductive reference line on the peripheral area and extending in a first direction parallel to a first edge among four edges of the rectangular shape of the circuit area.

An inductor conductor design which minimizes the impact of skin effect in the conductors at high frequencies in integrated circuits and the method of manufacture thereof is described herein.

Semiconductor package includes lower redistribution layer providing first redistribution wirings and having first region and second region surrounding the first region, semiconductor chip disposed on the first region and electrically connected to the first redistribution wirings, sealing member covering the semiconductor chip on the lower redistribution layer, plurality of vertical conductive structures penetrating the sealing member on the second region and electrically connected to the first redistribution wirings, upper redistribution layer disposed on the sealing member and having second redistribution wirings electrically connected to the plurality of vertical conductive structures and plurality of bonding pads. The vertical conductive structures are bonded to the bonding pad and extend vertically from the plurality of bonding pads. The vertical conductive structure includes first to third conductive pillar portions sequentially stacked. The first conductive pillar portion has first length and the third conductive pillar portion has third length greater than the first length.

A semiconductor device includes a printed wiring board; a first semiconductor module including a first package body and a first heat radiation surface on one surface of the first package body, another surface of the first package body, facing the first heat radiation surface, faces one face of the printed wiring board; a first heat radiator on the first heat radiation surface; a second semiconductor module including a second package body and a second heat radiation surface on one surface of the second package body, another surface of the second package body, facing the second heat radiation surface, faces another face of the printed wiring board; and a second heat radiator provided on the second heat radiation surface. The first and second semiconductor modules are arranged to overlap each other in a plan view. The second semiconductor module is connected in parallel to the first semiconductor module.

A semiconductor device includes a semiconductor element, a conductor, and a sealing resin. The conductor includes a die pad, a first terminal, and a second terminal. The sealing resin covers a portion of the conductor and the semiconductor element. The sealing resin includes first, second, third and fourth resin surfaces. The die pad includes a first-lead obverse surface with the semiconductor element mounted, and a first-lead reverse surface exposed from the second resin surface. The first terminal is bent in a first sense of z direction and exposed from the third resin surface. The second terminal is bent in the first sense of z direction and exposed from the fourth resin surface. The first resin surface includes a recessed region recessed in z direction toward the second resin surface. As viewed in z direction, the recessed region overlaps with an imaginary line connecting the first terminal and the second terminal.

Methods of forming microelectronic package structures/modules, and structures formed thereby, are described. Structures formed herein may include a second die disposed on a first die, a first plurality of interconnect structures disposed on a top surface of the first die, and a second plurality of interconnect structures disposed on a top surface of the second die. Top surfaces of the first plurality of interconnect structures are coplanar with top surfaces of the plurality of the second interconnect structures. At least one of the interconnect structures of the first or the second plurality of interconnect structures comprises a sigmoid shape.

An electronic assembly includes a plurality of electronic die arranged into shingles, each shingle having a multiple offset stacked die coupled by cascading connections. Each shingle is arranged in a stack of shingles with alternate shingles having die stacked in opposite directions and offset in a zigzag manner to facilitate vertical electrical connections from a top of the electronic assembly to a bottom die of each shingle.

A semiconductor device includes a semiconductor element, a first lead including a die pad portion and a first terminal portion, and a sealing resin. A first-lead reverse surface is exposed from a second resin surface. The first terminal portion includes a first section joined to the die pad portion, a second section located on a first side in a z direction with respect to the first section and used for mounting, and a third section between the first section and the second section.

An electronic assembly includes a plurality of electronic die arranged into shingles, each shingle having a multiple offset stacked die coupled by cascading connections. Each shingle is arranged in a stack of shingles with alternate shingles having die stacked in opposite directions and offset in a zigzag manner to facilitate vertical electrical connections from a top of the electronic assembly to a bottom die of each shingle.

A semiconductor arrangement includes a substrate, a semiconductor element connected to the substrate and including on a side remote from the substrate a contact surface which is connected to the substrate via a first bond connecting means such that as to form on the contact surface a stitch contact arranged between a first loop and a second loop of the first bond connecting means. The first loop has a first maximum and the second loop has a second maximum. A second bond connecting means has a first transverse arranged to run above the first stitch contact and, viewed running parallel to the contact surface, between the first maximum of the first loop and the second maximum of the second loop. The first transverse loop of the second bond connecting means is arranged to run below the first maximum of the first loop and/or the second maximum of the second loop.