A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

A semiconductor module includes an insulated substrate, a conductive pattern, a transistor, a negative power source terminal spaced apart from the transistor in a first direction, and an auxiliary wire coupled to the conductive pattern, in which the transistor includes an emitter electrode, and a gate electrode spaced apart from the emitter electrode in the first direction, a current flows from a specific point over the conductive pattern through the transistor to the negative power source terminal, the emitter electrode includes a first portion and a second portion spaced apart from the first portion in a second direction opposite to the first direction, the auxiliary wire includes a first end closer to the specific point and a second end closer to the transistor, and the second end is closer to the second portion than to the first portion.

A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

A bond wire having a metal core, a dielectric layer, and a ground connectable metallization, wherein the bond wire has one or more vapor barrier coatings. Further, the present invention relates to a die package with at least one bond wire according to the invention.

A semiconductor device is provided, which includes a semiconductor die and a redistribution layer. The redistribution layer is formed on the semiconductor die, and includes a plurality of center pads, a plurality of edge pads, and a plurality of conductive wires electrically connecting the plurality of center pads to the plurality of edge pads. Each of the plurality of conductive wires comprises at least two turning points, and an inner angle at each turning point is greater than a predetermined angle.

A semiconductor device is provided, which includes a semiconductor die and a redistribution layer. The redistribution layer is formed on the semiconductor die, and includes a plurality of center pads, a plurality of edge pads, and a plurality of conductive wires electrically connecting the plurality of center pads to the plurality of edge pads. Each of the plurality of conductive wires comprises at least two turning points, and an inner angle at each turning point is greater than a predetermined angle.

In an embodiment of the disclosed technology, a semiconductor system may include a substrate; a first memory chip supported by the substrate, wherein the first memory chip includes a first main pad structured to be electrically connected to an interconnection structure disposed outside the first memory chip and a first sub pad electrically connected to the first main pad; and one or more second memory chips supported by the substrate, wherein each of the one or more second memory chips includes a second main pad structured to be electrically connected to an interconnection structure disposed outside the first memory chip and a second sub pad electrically connected to the second main pad, and the second main pad or the second sub pad included in one second memory chip of the one or more second memory chips is electrically connected to the first sub pad by a first internal interconnection structure.

A semiconductor arrangement includes a substrate, a semiconductor element connected to the substrate and including on a side remote from the substrate a contact surface which is connected to the substrate via a first bond connecting means such that as to form on the contact surface a stitch contact arranged between a first loop and a second loop of the first bond connecting means. The first loop has a first maximum and the second loop has a second maximum. A second bond connecting means has a first transverse arranged to run above the first stitch contact and, viewed running parallel to the contact surface, between the first maximum of the first loop and the second maximum of the second loop. The first transverse loop of the second bond connecting means is arranged to run below the first maximum of the first loop and/or the second maximum of the second loop.

A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.