Embodiments include forming an interposer having reinforcing structures disposed in a core layer of the interposer. The interposer may be attached to a package device by electrical connectors. The reinforcing structures provide rigidity and thermal dissipation for the package device. Some embodiments may include an interposer with an opening in an upper core layer of the interposer to a recessed bond pad. Some embodiments may also use connectors between the interposer and the package device where a solder material connected to the interposer surrounds a metal pillar connected to the package device.

A three-dimensional stacking technique performed in a wafer-to-wafer fashion reducing the machine movement in production. The Wafers are processed with metallic traces and stacked before dicing into separate die stacks. The traces of each layer of the stacks are interconnected via electroless plating.

In a general aspect, an apparatus can include a metal layer, a first semiconductor die, a second semiconductor die, a molding compound, a first electrical contact and a second electrical contact. The first semiconductor die can have a first side disposed on the metal layer. The second semiconductor die can have a first side disposed on the metal layer. The metal layer can electrically couple the first side of the first semiconductor die with the first side of the second semiconductor die. The molding compound can at least partially encapsulate the metal layer, the first semiconductor die and the second semiconductor die. The first electrical contact can be to a second side of the first semiconductor die and disposed on a surface of the apparatus. The second electrical contact can be to a second side of the second semiconductor die and disposed on the surface of the apparatus.

In an embodiment, a semiconductor device includes: a mounting substrate having electrically conductive formations thereon, a semiconductor die coupled with the mounting substrate, the semiconductor die with electrical contact pillars facing towards the mounting substrate, an anisotropic conductive membrane between the semiconductor die and the mounting substrate, the membrane compressed between the electrical contact pillars and the mounting substrate to provide electrical contact between the electrical contact pillars of the semiconductor die and the electrically conductive formations on the mounting substrate.

A semiconductor device is vertically mounted on a medium such as a printed circuit board (PCB). The semiconductor device comprises a block of semiconductor dies, mounted in a vertical stack without offset. Once formed and encapsulated, side grooves may be formed in the device exposing electrical conductors of each die within the device. The electrical conductors exposed in the grooves mount to electrical contacts on the medium to electrically couple the semiconductor device to the medium.

A three-dimensional stacking technique performed in a wafer-to-wafer fashion reducing the machine movement in production. The Wafers are processed with metallic traces and stacked before dicing into separate die stacks. The traces of each layer of the stacks are interconnected via electroless plating.

The present disclosure is directed to systems and methods for improving the impedance matching of semiconductor package substrates by incorporating one or more magnetic build-up layers proximate relatively large diameter, relatively high capacitance, conductive pads formed on the lower surface of the semiconductor package substrate. The one or more magnetic layers may be formed using a magnetic build-up material deposited on the lower surface of the semiconductor package substrate. Vias conductively coupling the conductive pads to bump pads on the upper surface of the semiconductor package substrate pass through and are at least partially surrounded by the magnetic build-up material.

A display device includes a circuit substrate, a plurality of pad sets and a plurality of light-emitting elements. The plurality of pad sets is disposed on the circuit substrate, and each pad set includes a first pad and a second pad surrounding the first pad. The plurality of light-emitting elements is disposed above the circuit substrate, and each light-emitting element includes a first electrode, a second electrode and a light-emitting stack between the first electrode and the second electrode, wherein the first electrode is electrically connected to the first pad, the second electrode is electrically connected to the second pad, and an orthographic projection of the second electrode on the circuit substrate is overlapped with an orthographic projection of the first pad on the circuit substrate.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

A compound component device including laminated first compound component layers housing first electronic components, in which the first compound component layers each include an electronic component layer, including a first main surface and a second main surface opposed to the first main surface, and a redistribution layer provided on the first main surface. At least two of the plurality of first compound component layers configure an inverted layer for which the first compound component layers are paired and formed so that the second main surfaces face each other. The electronic component layer includes the first electronic component, a first resin sealing portion to seal the first electronic component, a side wall portion that encloses the first electronic component, and electronic component layer piercing vias which pierce the side wall portion and electrically connect with the redistribution layer, and the first electronic component is directly joined to the redistribution layer.