Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.

A chip package includes a first interconnection scheme; a plurality of first metal contacts under and on the first interconnection scheme and at a bottom surface of the chip package; a first semiconductor IC chip over the first interconnection scheme; a first connector over the first interconnection scheme and at a same horizontal level as the first semiconductor IC chip, wherein the first connector comprises a first substrate and a plurality of first through vias vertically extending through the first substrate of the first connector; a first polymer layer over the first interconnection scheme, wherein the first polymer layer has a top surface coplanar with a top surface of the first semiconductor IC chip, a top surface of the first substrate of the first connector and a top surface of each of the plurality of first through vias; and a second interconnection scheme on the top surface of the first polymer layer, the top surface of the first semiconductor IC chip, the top surface of the first connector and the top surface of each of the plurality of first through vias, wherein the second interconnection scheme comprises a plurality of second metal contacts at a top surface of the chip package.

A semiconductor package includes: a first semiconductor chip stack including a plurality of first semiconductor chips which are stacked in a vertical direction; a bridge die stack disposed to be spaced apart from the first semiconductor chip stack in a horizontal direction and including a plurality of bridge dies which are stacked in the vertical direction, wherein the bridge dies include through electrodes, respectively, and the through electrodes aligned in the vertical direction are connected to each other through a connection electrode between the bridge dies; a redistribution layer disposed over the first semiconductor chip stack and the bridge die stack; a second semiconductor chip disposed over the redistribution layer and configured to receive a voltage through the through electrodes aligned in the vertical direction, the connection electrode, and the redistribution layer; and a voltage regulator configured to adjust the voltage.

Presented herein is a WLCSP intermediate structure and method forming the same, the method comprising forming a first redistribution layer (RDL) on a carrier, the first RDL having mounting pads disposed on the first RDL, and mounting interposer dies on a second side of the first RDL. A second RDL is formed over a second side of the interposer dies, the second RDL having a first side adjacent to the interposer dies, one or more lands disposed on the second RDL, at least one of the one or more lands in electrical contact with at least one of the interposer dies or at least one of the mounting pads. A molding compound is formed around the interposer dies and over a portion of the first RDL prior to the forming the second RDL and the second RDL is formed over at least a portion of the molding compound.

Provided are a package structure and a method of forming the same. The package structure includes a first tier, a second tier, and a third tier. The first tier includes an interposer. The second tier is disposed on the first tier and includes a bottom die. The third tier is disposed on the second tier and includes a plurality of first dies and at least one second die. The at least one second die is disposed between the plurality of first dies. The plurality of first dies are electrically connected to the bottom die by a plurality of first connectors to form a signal path, the plurality of first dies are electrically connected to the interposer by a plurality of second connectors to form a power path, and the plurality of first connectors are closer to the at least one second die than the plurality of second connectors.

A display includes a pixel electrode disposed on a substrate, a light emitting element disposed on the pixel electrode, a connection electrode disposed on a side surface of the light emitting element, and a common electrode disposed on the light emitting element. The light emitting element includes a first sub light emitting element, a second sub light emitting element disposed on the first sub light emitting element, and a third sub light emitting element disposed on the second sub light emitting element. The connection electrode is disposed on at least one side surface of the first sub light emitting element, the second sub light emitting element, and the third sub light emitting element.

A semiconductor structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The second semiconductor die is bonded to the first bonding structure of the first semiconductor die. The first bonding structure includes a first dielectric layer, a second dielectric layer covering the first dielectric layer, and first conductors embedded in the first dielectric layer and the second dielectric layer, wherein each of the first conductors includes a first conductive barrier layer covering the first dielectric layer and a first conductive pillar disposed on the first conductive barrier layer, and the first conductive pillars are in contact with the second dielectric layer.

A multi-stacked package-on-package structure includes a method. The method includes: adhering a first die and a plurality of second dies to a substrate, the first die having a different function from each of the plurality of second dies; attaching a passive device over the first die; encapsulating the first die, the plurality of second dies, and the passive device; and forming a first redistribution structure over the passive device, the first die, and the plurality of second dies, the passive device connecting the first die to the first redistribution structure.

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

A semiconductor package includes a first interposer, a second interposer, and a gap between the first interposer and the second interposer. The first interposer and the second interposer are coplanar. A first die is mounted on the first interposer and the second interposer. The first die includes first connection elements connecting the first die to the first interposer or the second interposer. A redistribution layer (RDL) structure is disposed on bottom surfaces of the first and second interposers for connecting the first interposer with the second interposer. The RDL structure includes at least one bridge trace traversing the gap to electrically connect the first interposer with the second interposer.