The present invention has: a heater; and a bonding tool having a lower surface on which a memory chip is adsorbed; and an upper surface attached to the heater, and is provided with a bonding tool which presses the peripheral edge of the memory chip to a solder ball in a first peripheral area of the lower surface and which presses the center of the memory chip (60) to a DAF having a heat resistance temperature lower than that of the solder ball in a first center area. The amount of heat transmitted from the first center area to the center of the memory chip is smaller than that transmitted from the first peripheral area (A) to the peripheral edge of the memory chip. Thus, the bonding apparatus in which the center of a bonding member can be heated to a temperature lower than that at the peripheral edge can be provided.

In one example, a system comprises a laser assisted bonding (LAB) tool. The LAB tool comprises a stage block and a first lateral laser source facing the stage block from a lateral side of the stage block. The stage block is configured to support a substrate and a first electronic component coupled with the substrate, and the first electronic component comprises a first interconnect. The first lateral laser source is configured to emit a first lateral laser beam laterally toward the stage block to induce a first heat on the first interconnect to bond the first interconnect with the substrate. Other examples and related methods are also disclosed herein.

A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.

Tool (10) for the lower die of a sintering device, the tool (10) having a rest (20) for an electronic subassembly (30) comprising a circuit carrier, to be sintered, where the rest (20) is formed from a material with a coefficient of linear expansion that is close to the coefficient of expansion of the circuit carrier of the electronic subassembly (30).

Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

The scattering of a rare earth hydroxide is suppressed, and the loss of bond strength between a first ceramic member and a second ceramic member is reduced.

A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other, wherein the joint layer includes a perovskite oxide represented by ABO.sub.3 (wherein A is a rare earth element, and B is Al) and includes no rare earth single oxide containing exclusively a rare earth element and oxygen.

The present disclosure is directed to an apparatus having a bond head configured to heat and compress a semiconductor package assembly, and a bonding stage configured to hold the semiconductor package assembly, wherein the bonding stage comprises a ceramic material including silicon and either magnesium or indium.

A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.

Disclosed is a bonding tool for simultaneously heating a semiconductor chip using a laser and bonding the semiconductor chip in a flip chip laser bonding process, in which a vacuum wall configured to maintain a vacuum at a time of adsorbing the semiconductor chip is formed at the outer parts of the bottom surface of the bonding tool, and a plurality of contact protrusions is formed lengthwise and breadthwise on the bottom surface of the bonding tool in a pattern configured such that a heat transfer area of the semiconductor chip to the bonding tool at the center of the semiconductor chip is relatively large and the heat transfer area is gradually reduced in the direction towards the outer parts of the semiconductor chip so as to achieve a uniform temperature distribution from the center to the outer parts of the semiconductor chip.

An array substrate includes a driver, a glass substrate having a driver mounting section where the driver is mounted, an anisotropic conductive material that is interposed between the driver and driver mounting section so as to electrically connect both and that at least includes a binder made of a thermosetting resin and conductive particles in the binder, and a heat supply part provided on at least the driver mounting section of the glass substrate for supplying heat to the anisotropic conductive material.