A semiconductor package includes a metallic pad and leads, a semiconductor die attached to the metallic pad, the semiconductor die including an active side with bond pads opposite the metallic pad, a wire bond extending from a respective bond pad of the semiconductor die to a respective lead of the leads, a heat spreader over the active side of the semiconductor die with a gap separating the active side of the semiconductor die from the heat spreader, an electrically insulating material within the gap and in contact with the active side of the semiconductor die and the heat spreader; and mold compound covering the semiconductor die and the wire bond, and partially covering the metallic pad and the heat spreader, with the metallic pad exposed on a first outer surface of the semiconductor package and with the heat spreader exposed on a second outer surface of the semiconductor package.

A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

Provided is a wire bonding apparatus for electrically connecting an electrode and an aluminum alloy wire to each other by wire bonding. The apparatus includes a wire feeding device which feeds the wire. The wire has a diameter not less than 500 m and not greater than 600 m. The apparatus includes a heating device heats the wire to a temperature that is not lower than 50 C. and not higher than 100 C. The apparatus further includes a pressure device which presses the wire against the electrode. The apparatus further includes an ultrasonic wave generating device which generates an ultrasonic vibration that is applied to the wire that is pressed by the pressure device.

A clamping system, a wire bonding machine and a method for bonding wires are provided. An exemplary clamping system includes a clamping device. The clamping device includes: at least one linear guide rail; a first clamping rod arranged perpendicular to the linear guide rail; and a second clamping rod arranged perpendicular to the linear guide rail and parallel to the first clamping rod.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:
Strength ratio=ultimate strength/0.2% offset yield strength.(1)

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:
Strength ratio=ultimate strength/0.2% offset yield strength.(1)

Bonding processing for a plurality of bonding points of different distances with respect to a reference position (origin) of an object to be bonded without changing a moving distance of bonding means is provided. The bonding means, a bonding stage having a work-holder and a rotary mechanism unit for rotating the work-holder, and a control unit for controlling rotation of the work-holder are provided. The bonding means is movable relative to a placement surface of the work-holder in a reference orientation and has a reference position on its moving direction. The plurality of bonding points include bonding points of different separation distances from the reference position along the moving direction while the object to be bonded is being held to the work-holder in the reference orientation. The control unit corrects differences in the separation distances of the plurality of bonding points by controlling rotation of the work-holder.

There is provided a bonding method capable of accurately positioning a bonding stage. According to an aspect of the present invention, a bonding method using a bonding apparatus including a rotation drive mechanism for rotating a bonding stage 1 about a -axis includes the steps of: (e) locking the bonding stage with respect to the -axis, and bonding a wire or bump onto a certain area of a substrate held on the bonding stage; (f) unlocking the bonding stage with respect to the -axis, and rotating the bonding stage about the -axis with the rotation drive mechanism; and (g) locking the bonding stage with respect to the -axis, and bonding a wire or bump onto a remaining region of the substrate.

A method of operating a wire bonding machine is provided. The method includes the steps of: (a) supporting a substrate on a material handling system of the wire bonding machine; (b) changing a bend profile of the substrate; and (c) securing, after step (b), the substrate against a support structure of the wire bonding machine using a clamping element of the wire bonding machine, the support structure for supporting the substrate during a wire bonding operation, and the clamping element for securing the substrate to the support structure during the wire bonding operation.

A method of adjusting a clamping of a semiconductor element against a support structure on a wire bonding machine is provided. The method includes: (a) detecting an indicia of floating of the semiconductor element with respect to the support structure at a plurality of locations of the semiconductor element; and (b) adjusting the clamping of the semiconductor element against the support structure based on the results of step (a).