H01L2224/80143

Chip arranging method
09806057 · 2017-10-31 · ·

A chip arranging method for arranging a plurality of chips on a wafer includes a groove forming step of forming a plurality of intersecting grooves that mark off each of chip placement regions on the front surface side of the wafer, a liquid supplying step of supplying a liquid to the chip placement regions, a chip placing step of placing the chips on the liquid to position the chips in the chip placement regions by the surface tension of the liquid after carrying out the liquid supplying step, and a liquid removing step of removing the liquid to arrange the plurality of chips on the wafer after carrying out the chip placing step.

Bondable device including a hydrophilic layer
09773741 · 2017-09-26 · ·

An apparatus includes a first component layer. The component layer includes a first semiconductor device. The apparatus further includes a first hydrophilic layer and a first hydrophobic layer. The first hydrophobic layer is positioned between the first component layer and the first hydrophilic layer. The apparatus further includes a first contact extending through the first hydrophobic layer and the first hydrophilic layer.

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
20220199559 · 2022-06-23 · ·

A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first semiconductor device, a second semiconductor device, and an alignment material. The first semiconductor device has a first bonding layer, and the first bonding layer includes a first bond pad contacting an organic dielectric material. The second semiconductor device has a second bonding layer, and the second bonding layer includes a second bond pad contacting the organic dielectric material. The alignment material is between the first bonding layer and the second bonding layer.

3D-STACKED SEMICONDUCTOR DEVICE WITH IMPROVED ALIGNMENT USING CARRIER WAFER PATTERNING

Provided is a semiconductor device that includes: a 1.sup.st carrier wafer; and a 1.sup.st semiconductor chip on the 1.sup.st carrier wafer, wherein the 1.sup.st carrier wafer includes at least one 1.sup.st pattern, and the 1.sup.stpattern includes therein a 1.sup.st stress material which is different from a material forming the 1.sup.st carrier wafer, and configured to expand or shrink by thermal processing.

SEMICONDUCTOR DEVICE INCLUDING JOINT PORTION BETWEEN CONDUCTIVE CONNECTION STRUCTURES AND METHOD OF FABRICATING THE SAME
20230260956 · 2023-08-17 ·

In an embodiment, a method of fabricating a semiconductor device includes providing a first substrate structure, the first substrate structure including a first substrate body, a first conductive connection structure and a first two-dimensional inorganic layer having negative charges disposed adjacent to each other over the first substrate body, providing a second substrate structure, the second substrate structure including a second substrate body, a second conductive connection structure and a second two-dimensional inorganic layer having negative charges disposed adjacent to each other over the second substrate body, and joining the first and second substrate structure to each other such that the first conductive connection structure and the second conductive connection structure are connected to each other, and the first two-dimensional inorganic layer and the second two-dimensional inorganic layer are joined to each other.

Method and device for bonding of chips
11764198 · 2023-09-19 · ·

A method and device for bonding chips onto a substrate or onto further chips. The chips are bonded onto the substrate or the further chips by means of a direct bond.

Semiconductor package including alignment material and method for manufacturing semiconductor package

A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first semiconductor device, a second semiconductor device, and an alignment material. The first semiconductor device has a first bonding layer, and the first bonding layer includes a first bond pad contacting an organic dielectric material. The second semiconductor device has a second bonding layer, and the second bonding layer includes a second bond pad contacting the organic dielectric material. The alignment material is between the first bonding layer and the second bonding layer.

Method of transferring a plurality of micro light emitting diodes to a target substrate, array substrate and display apparatus thereof

The present application discloses a method for transferring a plurality of micro light emitting diodes (micro LEDs) to a target substrate. The method includes providing a first substrate having an array of the plurality of micro LEDs; providing a target substrate having a bonding layer having a plurality of bonding contacts; applying the plurality of bonding contacts with an electrical potential; aligning the plurality of micro LEDs with the plurality of bonding contacts having the electrical potential; and transferring the plurality of micro LEDs in the first substrate onto the target substrate.

METHOD OF TRANSFERRING A PLURALITY OF MICRO LIGHT EMITTING DIODES TO A TARGET SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY APPARATUS THEREOF
20210335752 · 2021-10-28 · ·

The present application discloses a method for transferring a plurality of micro light emitting diodes (micro LEDs) to a target substrate. The method includes providing a first substrate having an array of the plurality of micro LEDs; providing a target substrate having a bonding layer having a plurality of bonding contacts; applying the plurality of bonding contacts with an electrical potential; aligning the plurality of micro LEDs with the plurality of bonding contacts having the electrical potential; and transferring the plurality of micro LEDs in the first substrate onto the target substrate.

CHIP PACKAGE STRUCTURE WITH REDISTRIBUTION LAYER HAVING BONDING PORTION

A chip package structure is provided. The chip package structure includes a first redistribution layer having a bonding portion. The bonding portion includes a dielectric layer. The chip package structure includes a chip structure bonded to the bonding portion. A first width of the dielectric layer of the bonding portion is substantially equal to a second width of the chip structure. The chip package structure includes a protective layer over the first redistribution layer and surrounding the chip structure. A portion of the protective layer extends into the first redistribution layer and surrounds the bonding portion.