Semiconductor packages and methods of forming the same are disclosed. Embodiments include forming a first recess in a first substrate, wherein a first area of an opening of the first recess is larger than a second area of a bottom of the first recess. The embodiments also include forming a first device, wherein a third area of a top end of the first device is larger than a fourth area of a bottom end of the first device. The embodiments also include placing the first device into the first recess, wherein the bottom end of the first device faces the bottom of the first recess, and bonding a sidewall of the first device to a sidewall of the first recess.

Disclosed is a process, structure, equipment and apparatus directed to a low cost, high volume approach for the assembly of ultra small die to three-dimensional (3D) or 2.5D semiconductor packages.

Disclosed is a process, structure, equipment and apparatus directed to a low cost, high volume approach for the assembly of ultra small die to three-dimensional (3D) or 2.5D semiconductor packages.

A method for the transfer of components from a sender substrate to a receiver substrate includes provision and/or production of the components on the sender substrate, transfer of the components of the sender substrate to the transfer substrate, and transfer of the components from the transfer substrate to the receiver substrate. The components can be transferred selectively by means of bonding means and/or debonding means.

Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

Disclosed is a process, structure, equipment and apparatus directed to a low cost, high volume approach for the assembly of ultra small die to three-dimensional (3D) or 2.5D semiconductor packages.

Disclosed is a process, structure, equipment and apparatus directed to a low cost, high volume approach for the assembly of ultra small die to three-dimensional (3D) or 2.5D semiconductor packages.

Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force. By applying appropriate charges on the conductor lines, electrostatic self-alignment is realized, which improves the alignment obtained through capillary force and maintains the alignment during evaporation of the liquid.

Disclosed is a process, structure, equipment and apparatus directed to a low cost, high volume approach for the assembly of ultra small die to three-dimensional (3D) or 2.5D semiconductor packages.

Disclosed is a process, structure, equipment and apparatus directed to a low cost, high volume approach for the assembly of ultra small die to three-dimensional (3D) or 2.5D semiconductor packages.