The first logic wafer is attached to a supporting wafer, which adds sufficient depth to this bonded structure such that the first logic wafer may be thinned during the manufacturing process. The first logic wafer is thinned such that the through silicon vias may be etched in the substrate of the first logic wafer so as to provide adequate connectivity to a second logic wafer, which is bonded to the first logic wafer. The second logic wafer adds sufficient depth to this bonded structure to allow the supporting wafer to then be thinned to enable through silicon vias to be added to the supporting wafer so as to provide appropriate connectivity for the entire stacked structure. The thinned supporting wafer is retained in the finished stacked wafer structure and may comprise additional components (e.g. capacitors) supporting the operation of the processing circuitry in the logic wafers.

Aspects of the disclosure relate to forming stacked NAND with multiple memory sections. Forming the stacked NAND with multiple memory sections may include forming a first memory section on a sacrificial substrate. A logic section may be formed on a substrate. The logic section may be bonded to the first memory section. The sacrificial substrate may be removed from the first memory section and a second memory section having a second sacrificial substrate may be formed and bonded to the first memory section.

A semiconductor device including a first structure including a first conductive pattern, the first conductive pattern exposed on an upper portion of the first structure, a mold layer covering the first conductive pattern, a second structure on the mold layer, and a through via penetrating the second structure and the mold layer, the through via electrically connected to the first conductive pattern, the through via including a first via segment in the second structure and a second via segment in the mold layer, the second via segment connected to the first via segment, an upper portion of the second via segment having a first width and a middle portion of the second via segment having a second width greater than the first width may be provided.

A bonded assembly includes a first semiconductor die that includes first metallic bonding structures embedded within a first bonding-level dielectric layer, and a second semiconductor die that includes second metallic bonding structures embedded within a second bonding-level dielectric layer and bonded to the first metallic bonding structures by metal-to-metal bonding. One of the first metallic bonding structures a pad portion, and a via portion located between the pad portion and the first semiconductor device, the via portion having second tapered sidewalls.

The occurrence of breaking and chipping at the wafer peripheral edge of a bonded wafer obtained by bonding a lamination wafer on a support wafer is suppressed. A lamination wafer to be bonded to a support wafer includes a large-diameter portion made of a silicon wafer whose peripheral edge is chamfered and a small-diameter portion, whose diameter is smaller than that of the large-diameter portion, formed on the large-diameter portion concentrically and integrally with the large-diameter portion, and the small-diameter portion includes a straight body portion whose side surface is perpendicular to the wafer surface, and a neck portion whose side surface is oblique with a predetermined angle to the wafer between the straight body portion and the large-diameter portion, and the small-diameter portion is formed such that the upper face of the straight body portion is to be bonded to the support wafer.

In one embodiment, a semiconductor device includes a first interconnection including a first extending portion extending in a first direction, and a first curved portion curved with respect to the first extending portion. The device further includes a second interconnection including a second extending portion extending in the first direction and adjacent to the first extending portion in a second direction, and a second curved portion curved with respect to the second extending portion. The device further includes a first plug provided on the first curved portion, or on a first non-opposite portion included in the first extending portion and not opposite to the second extending portion in the second direction. The device further includes a second plug provided on the second curved portion, or on a second non-opposite portion included in the second extending portion and not opposite to the first extending portion in the second direction.

A semiconductor package includes main pad structures and dummy pad structures between a first semiconductor chip and a second semiconductor chip. The main pad structures include first main pad structures apart from one another on the first semiconductor chip and second main pad structures placed apart from one another on the second semiconductor chip and bonded to the first main pad structures. The dummy pad structures include first dummy pad structures including first dummy pads apart from one another on the first semiconductor chip and first dummy capping layers on the first dummy pads, and second dummy pad structures including second dummy pads apart from one another on the second semiconductor chip and second dummy capping layers on the second dummy pads. The first dummy capping layers of the first dummy pad structures are not bonded to the second dummy capping layers of the second dummy pad structures.

The invention relates to a device and a method for the alignment of substrates.

A semiconductor device comprises a first chip bonded on a second chip. The first chip comprises a first substrate and first interconnection components formed in first IMD layers. The second chip comprises a second substrate and second interconnection components formed in second IMD layers. The device further comprises a first conductive plug formed within the first substrate and the first IMD layers, wherein the first conductive plug is coupled to a first interconnection component and a second conductive plug formed through the first substrate and the first IMD layers and formed partially through the second IMD layers, wherein the second conductive plug is coupled to a second interconnection component.

A semiconductor structure including at least one integrated circuit component is provided. The at least one integrated circuit component includes a first semiconductor substrate and a second semiconductor substrate electrically coupled to the first semiconductor substrate, wherein the first semiconductor substrate and the second semiconductor substrate are bonded through a first hybrid bonding interface, and at least one of the first semiconductor substrate or the second semiconductor substrate includes at least one first embedded capacitor.