There is a need to improve reliability of the semiconductor device.

A semiconductor device includes a printed circuit board and a semiconductor chip mounted over the printed circuit board. The semiconductor chip includes a pad, an insulation film including an opening to expose part of the pad, and a pillar electrode formed over the pad exposed from the opening. The printed circuit board includes a terminal and a resist layer including an opening to expose part of the terminal. The pillar electrode of the semiconductor chip and the terminal of the printed circuit board are coupled via a solder layer. Thickness h.sub.1 of the pillar electrode is measured from the upper surface of the insulation film. Thickness h.sub.2 of the solder layer is measured from the upper surface of the resist layer. Thickness h.sub.1 is greater than or equal to a half of thickness h.sub.2 and is smaller than or equal to thickness h.sub.2.

A manufacturing apparatus of a semiconductor device includes a stage, a head unit configured to face the stage, a driving unit configured to move the head unit towards and away from the stage, a heating unit configured to heat the head unit, and a control unit configured to control the driving unit to move the head unit away from the stage when the heating unit heats the head unit.

The present disclosure relates to use of a stimulus responsive polymer (SRP) as a capping material during direct metal-metal binding. Processes and layers employing an SRP are described herein.

A method for producing a semiconductor package is a method for producing a semiconductor package in which a plurality of semiconductor chips, each of which includes a substrate, conductive portions formed on the substrate, and microbumps formed on the conductive portions, are laminated, which includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump.

A sealing acrylic resin composition contains a thermosetting acrylic resin in liquid phase, an organic peroxide, and an inorganic filler in a content proportion ranging from 50% by mass to 95% by mass, inclusive. A silane coupling agent is bonded to the inorganic filler, a total organic carbon content of the inorganic filler in proportion being ranging from 0.1% by mass to 1.0% by mass, inclusive, in a state before the inorganic filler is mixed with at least one of the thermosetting acrylic resin and the organic peroxide. The silane coupling agent has an acrylic group.

The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, flux 9 is applied to the solder bumps 5a for flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumps 5a and make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.

A method of bonding a die comprising solder bumps to a substrate comprising bond pads, the method comprising the steps of heating the die from a first temperature to a second temperature, wherein the first temperature is below the melting point of the solder bumps, and the second temperature is above the melting point of the solder bumps; moving the die relative to the substrate to a first height, whereat the solder bumps contact the bond pads; moving the die further away from the substrate to a second height, while maintaining contact between the solder bumps and bond pads; and thereafter cooling the die from the second temperature to a third temperature to allow the solder bumps to solidify so as to bond the die to the substrate.

Provided is a flip chip mounting apparatus for mounting chips (400) to a substrate (200), and the apparatus includes at least one sectionalized mounting stage (45) divided into a heating section (452) and a non-heating section (456), the heating section being for heating a substrate (200) fixed to a front surface of the heating section, the non-heating section not heating the substrate (200) suctioned to a front surface of the non-heating section. With this, it is possible to provide an electronic-component mounting apparatus that is simple and capable of efficiently mounting a large number of electronic components.

A method for manufacturing an electronic component includes positioning a first surface of a first component facing a second surface of a second component in a first state. The first surface has a first pad having a first center. The second surface has a second pad having a second center. At least one of the first or second pads includes a metal member. The method includes melting the metal member and moving the first and second components until the melted metal member contacts both pads, moving at least one of the first or second components in a direction along the first surface, and solidifying the metal member in a second state. A first distance in a direction along the first surface between the first and second centers in the first state is longer than a second distance in the direction between the first and second centers in the second state.

A method for manufacturing an electronic component includes positioning a first surface of a first component facing a second surface of a second component in a first state. The first surface has a first pad having a first center. The second surface has a second pad having a second center. At least one of the first or second pads includes a metal member. The method includes melting the metal member and moving the first and second components until the melted metal member contacts both pads, moving at least one of the first or second components in a direction along the first surface, and solidifying the metal member in a second state. A first distance in a direction along the first surface between the first and second centers in the first state is longer than a second distance in the direction between the first and second centers in the second state.