A bonding head and a die bonding apparatus having the same are disclosed. The bonding head includes a body connected to a driving section for transferring the die, a plate heater mounted to a lower surface of the body and a collet mounted to a lower surface of the plate heater and configured to hold the die using a vacuum pressure. A cooling channel is formed at the lower surface of the body, and cooling passages are formed through the body and connected with the cooling channel to supply a cooling fluid into the cooling channel and to recover the cooling fluid from the cooling channel thereby cooling the plate heater.

The invention concerns a method of flip-chip assembly between first (1) and second (2) components each comprising connection pads (11, 21) on one of the faces of same, referred to as assembly faces, which involves transferring the components onto each other via the assembly faces of same in such a way as to create electrical interconnections between the pads of the first and second components. The invention involves transforming the copper oxide into copper by UV annealing, very locally, in the gap between the components, at least around the areas adjacent to the connection pads. The method according to the invention can be used for any component that is transparent to UV rays, including for substrates made from a plastic material such as substrates made from PEN or PET. The invention also concerns the assembly of two components obtained by the method.

The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, flux 9 is applied to the solder bumps 5a for flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumps 5a and make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.

A method of bonding a semiconductor element to a substrate is provided. The method includes the steps of: (a) providing the semiconductor element at a position separated from the substrate, the semiconductor element including a plurality of conductive structures, each of the conductive structures including a contact portion; (b) heating the semiconductor element at the position such that the contact portions are in a molten state; and (c) bonding the semiconductor element to the substrate such that each of the contact portions is bonded to a corresponding conductive structure of the substrate.

A chip transferring and bonding device, and a chip transferring and bonding method are provided. The chip transferring and bonding device includes a signal control module, a substrate carrying module, a chip transferring module, a substrate preheating module and a chip bonding module. The substrate preheating module is configured to preheat the circuit substrate at a predetermined preheating temperature, thereby allowing the soldering materials disposed between each chip and the circuit substrate to be preheated at the predetermined preheating temperature. The chip bonding module is configured to instantaneously heat the soldering materials disposed between each chip and the circuit substrate at a predetermined heating temperature. When the substrate preheating module and the chip bonding module are optionally configured to be used simultaneously, the substrate preheating module is configured to provide a predetermined preheating temperature, and the chip bonding module is configured to provide a predetermined heating temperature.

A semiconductor device is presented. The semiconductor device includes a lower semiconductor die, a stack of upper semiconductor dies disposed over the lower semiconductor die, a top semiconductor die disposed over the stack of upper semiconductor dies, a non-conductive film material disposed between adjacent semiconductor dies of the lower semiconductor die and the stack of upper semiconductor dies, and a mold compound material disposed between the top semiconductor die and the stack of upper semiconductor dies, and on sidewalls of the stack of upper semiconductor dies and the top semiconductor die.

A method of packaging a chip includes: forming a groove on a circuit board. Providing a chip assembly, the chip assembly includes the chip, conductive pastes, and a deformable member. Placing the chip assembly at a first temperature to cause the deformable member to contract. Placing the chip assembly in the groove; heating the chip assembly at a second temperature. Subjecting the circuit board and the chip assembly to reflow soldering at a third temperature. The third temperature is greater than the second temperature, and the second temperature is greater than the first temperature. The present disclosure further provides a chip packaging structure and a terminal device.