A connection arrangement for forming a component carrier structure is disclosed. The connection arrangement includes a first electrically conductive connection element and a second electrically conductive connection element. The first connection element and the second connection element are configured such that, upon connecting the first connection element with the second connection element along a connection direction, a form fit is established between the first connection element and the second connection element that limits a relative motion between the first connection element and the second connection element in a plane perpendicular to the connection direction. A component carrier and a method of forming a component carrier structure are also disclosed.

An IC package including an integrated circuit die having a major surface and one or more solder bumps located on the major surface in at least one corner region of the major surface and a substrate having a surface, the surface including bump pads thereon. The major surface of the integrated circuit die faces the substrate surface, the one or more solder bumps are bonded to individual ones of the bump pads to thereby form a bond joint, the major surface of the integrated circuit die has a footprint area of at least about 400 mm.sup.2. A ratio of a coefficient of thermal expansion of the substrate (CTE.sub.sub) to a coefficient of thermal expansion of the integrated circuit die (CTE.sub.die) is at least about 3:1. A method of manufacturing an IC package is also disclosed.

An IC package including an integrated circuit die having a major surface and one or more solder bumps located on the major surface in at least one corner region of the major surface and a substrate having a surface, the surface including bump pads thereon. The major surface of the integrated circuit die faces the substrate surface, the one or more solder bumps are bonded to individual ones of the bump pads to thereby form a bond joint, the major surface of the integrated circuit die has a footprint area of at least about 400 mm.sup.2. A ratio of a coefficient of thermal expansion of the substrate (CTE.sub.sub) to a coefficient of thermal expansion of the integrated circuit die (CTE.sub.die) is at least about 3:1. A method of manufacturing an IC package is also disclosed.

A semiconductor package structure includes a semiconductor die surface having a narrower pitch region and a wider pitch region adjacent to the narrower pitch region, a plurality of first type conductive pillars in the narrower pith region, each of the first type conductive pillars having a copper-copper interface, and a plurality of second type conductive pillars in the wider pitch region, each of the second type conductive pillars having a copper-solder interface. A method for manufacturing the semiconductor package structure described herein is also disclosed.

A manufacturing method of the light-emitting diode package structure is provided. A carrier is formed. The carrier comprises a first build-up circuit. At least one self-assembled material layer is formed on the first build-up circuit. A first solder mask layer is formed on the first build-up circuit. The first solder mask layer has at least one opening to expose a portion of the at least one self-assembled material layer. At least one light-emitting diode is disposed on the first build-up circuit. The at least one light-emitting diode has a self-assembled pattern, and the at least one light-emitting diode is self-assembled into the at least one opening of the first solder mask layer through a force between the self-assembled pattern and the at least one self-assembled material layer.

A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The semiconductor device is disposed on the substrate. The semiconductor device includes a first lateral surface. The underfill is disposed between the substrate and the semiconductor device. The underfill includes a first lateral surface. The first lateral surface of the underfill and the first lateral surface of the semiconductor device are substantially coplanar.

Methods and system for flip chip alignment for substrate and leadframe applications are disclosed and may include placing a semiconductor die on bond fingers of a metal leadframe, wherein at least two of the bond fingers comprise one or more recessed self-alignment features. A reflow process may be performed on the semiconductor die and leadframe, thereby melting solder bumps on the semiconductor die such that a solder bump may be pulled into each of the recessed self-alignment features and aligning the solder bumps on the semiconductor die to the bond fingers. The recessed self-alignment features may be formed utilizing a chemical etch process or a stamping process. A surface of the recessed self-alignment features or the bond fingers of the metal leadframe may be roughened. A solder paste may be formed in the recessed self-alignment features prior to placing the semiconductor die on the bond fingers of the metal leadframe.

A semiconductor device assembly that includes a substrate having a first side and a second side, the first side having at least one dummy pad and at least one electrical pad. The semiconductor device assembly includes a first semiconductor device having a first side and a second side and at least one electrical pillar extending from the second side. The electrical pillar is connected to the electrical pad via solder to form an electrical interconnect. The semiconductor device assembly includes at least one dummy pillar extending from the second side of the first semiconductor device and a liquid positioned between an end of the dummy pillar and the dummy pad. The surface tension of the liquid pulls the dummy pillar towards the dummy pad. The surface tension may reduce or minimize a warpage of the semiconductor device assembly and/or align the dummy pillar and the dummy pad.

Disclosed herein is a bump-on-trace interconnect with a wetted trace sidewall and a method for fabricating the same. A first substrate having conductive bump with solder applied is mounted to a second substrate with a trace disposed thereon by reflowing the solder on the bump so that the solder wets at least one sidewall of the trace, with the solder optionally wetting between at least half and all of the height of the trace sidewall. A plurality of traces and bumps may also be disposed on the first substrate and second substrate with a bump pitch of less than about 100 m, and volume of solder for application to the bump calculated based on at least one of a joint gap distance, desired solder joint width, predetermined solder joint separation, bump geometry, trace geometry, minimum trace sidewall wetting region height and trace separation distance.

RFID inlays or straps may be assembled using impulse heating of metal precursors. Metal precursors are applied to and/or included in contacts on an RFID IC and/or terminals on a substrate. During assembly of the tag, the IC is disposed onto the substrate such that the IC contacts physically contact either the substrate terminals or metal precursors that in turn physically contact the substrate terminals. Impulse heating is then used to rapidly apply heat to the metal precursors, processing them into metallic structures that electrically couple the IC contacts to the substrate terminals.