A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

Examples herein relate to optical modules. In particular, implementations herein relate to optical modules that include top-emitting VCSELs and/or top-entry photodetectors. The optical modules include a substrate having opposing first and second sides. The optical modules further includes a first interposer having opposing first and second sides and a plurality of top-emitting vertical-cavity surface-emitting lasers (VCSELs). The VCSELs are flip-chipped to the second side of the first interposer such that they are disposed between the substrate and the first interposer. The VCSELs are configured to emit optical signals having different wavelengths. The optical signals are configured to be combined and transmitted over a single optical fiber. The optical modules include a plurality of electrical conductors forming electrical paths between electrical contacts of the top-emitting VCSELs and the substrate.

Embodiments herein relate to systems, apparatuses, or processes directed to an interconnect joint that includes multiple core balls within a solder compound where the multiple core balls are substantially linearly aligned. The multiple core balls, which may include copper or be a polymer, couple with each other within the solder and form a substantially linear alignment during reflow. In embodiments, four or more core balls may be used to achieve a high aspect ratio interconnect joint with a tight pitch.

A pillar-type connection includes a first conductive layer that includes a hollow core. A second conductive layer is connected to the first conductive layer defining a conductive pillar that includes a top surface defining a recess aligned with the hollow core.

A manufacturing method of the light-emitting diode package structure is provided. A carrier is formed. The carrier comprises a first build-up circuit. At least one self-assembled material layer is formed on the first build-up circuit. A first solder mask layer is formed on the first build-up circuit. The first solder mask layer has at least one opening to expose a portion of the at least one self-assembled material layer. At least one light-emitting diode is disposed on the first build-up circuit. The at least one light-emitting diode has a self-assembled pattern, and the at least one light-emitting diode is self-assembled into the at least one opening of the first solder mask layer through a force between the self-assembled pattern and the at least one self-assembled material layer.

A semiconductor device assembly that includes a substrate having a first side and a second side, the first side having at least one dummy pad and at least one electrical pad. The semiconductor device assembly includes a first semiconductor device having a first side and a second side and at least one electrical pillar extending from the second side. The electrical pillar is connected to the electrical pad via solder to form an electrical interconnect. The semiconductor device assembly includes at least one dummy pillar extending from the second side of the first semiconductor device and a liquid positioned between an end of the dummy pillar and the dummy pad. The surface tension of the liquid pulls the dummy pillar towards the dummy pad. The surface tension may reduce or minimize a warpage of the semiconductor device assembly and/or align the dummy pillar and the dummy pad.

A first semiconductor die and a second semiconductor die can be bonded in a manner that enhances alignment of bonding pads. Non-uniform deformation of a first wafer including first semiconductor dies can be compensated for by forming a patterned stress-generating film on a backside of the first wafer. Metallic bump portions can be formed on concave surfaces of metallic bonding pads by a selective metal deposition process to reduce gaps between pairs of bonded metallic bonding pads. Pad-to-pad pitch can be adjusted on a semiconductor die to match the pad-to-pad pitch of another semiconductor die employing a tilt-shift operation in a lithographic exposure tool. A chuck configured to provide non-uniform displacement across a wafer can be employed to hold a wafer in a contoured shape for bonding with another wafer in a matching contoured position. Independently height-controlled pins can be employed to hold a wafer in a non-planar configuration.

A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The semiconductor device is disposed on the substrate. The semiconductor device includes a first lateral surface. The underfill is disposed between the substrate and the semiconductor device. The underfill includes a first lateral surface. The first lateral surface of the underfill and the first lateral surface of the semiconductor device are substantially coplanar.

A light-emitting diode package structure includes a carrier, at least one self-assembled material layer, a first solder mask layer, and at least one light-emitting diode. The carrier includes a first build-up circuit. The self-assembled material layer is disposed on the first build-up circuit. The first solder mask layer is disposed on the first build-up circuit. The first solder mask layer has at least one opening to expose a portion of the self-assembled material layer. The light-emitting diode is disposed on the first build-up circuit. The light-emitting diode has a self-assembled pattern. The light-emitting diode is self-assembled into the opening of the first solder mask layer through a force between the self-assembled pattern and the self-assembled material layer. A manufacturing method of the light-emitting diode package structure is also provided.

A method for arraying micro-LED chips is disclosed. The method includes preparing a chip carrier formed with a plurality of chip pockets whose internal pressure is reduced through a plurality of suction holes, capturing the micro-LED chips in the corresponding chip pockets such that the micro-LED chips are in close contact with the bottoms of the chip pockets, and placing the micro-LED chips captured in the chip pockets on a base body. Each of the chip pockets includes a slope through which an inlet having a larger width than the bottom is connected to the bottom. The distances between the centers of the adjacent micro-LED chips placed on the base body are the same as those between the centers of the corresponding chip pockets.