A semiconductor device has a substrate and plurality of first bumps formed over the substrate in an array. An array of second bumps is formed over the substrate on at least two sides of the first bumps. An electrical component is disposed over the first bumps. A package structure is disposed over the substrate and electrical component. The package structure has a horizontal member and legs extending from the horizontal member to form a cavity. The package structure is coupled to the array of second bumps. The package structure includes a material to operate as a heat sink or shielding layer. The shielding layer makes ground connection through the array of second bumps. The first bumps and second bumps have a similar height and width to form in the same manufacturing step. A protective layer, such as conductive epoxy, is disposed over the array of second bumps.

The present invention provides a buffer sheet composition including a thermosetting compound, which buffer sheet composition is used for producing a buffer sheet to be interposed between a heating member and an electronic component, when the electronic component is heated by the heating member so as to mount the electronic component on a substrate, as well as a buffer sheet including a thermosetting composition layer obtained by forming the buffer sheet composition into the form of a sheet.

The present invention provides a buffer sheet composition including a thermosetting compound, which buffer sheet composition is used for producing a buffer sheet to be interposed between a heating member and an electronic component, when the electronic component is heated by the heating member so as to mount the electronic component on a substrate, as well as a buffer sheet including a thermosetting composition layer obtained by forming the buffer sheet composition into the form of a sheet.

A stacked device including a first substrate that includes a quantum information processing device, a second substrate bonded to the first substrate, and multiple bump bonds and at least one pillar between the first substrate and the second substrate. Each bump bond of the multiple bump bonds provides an electrical connection between the first substrate and the second substrate. At least one pillar defines a separation distance between a first surface of the first substrate and a first surface of the second substrate. A cross-sectional area of each pillar is greater than a cross-sectional area of each bump bond of the multiple bump bonds, where the cross-sectional area of each pillar and of each bump bond is defined along a plane parallel to the first surface of the first substrate or to the first surface of the second substrate.

An example of a method of making a printed structure comprises providing a destination substrate, contact pads disposed on the destination substrate, and a layer of adhesive disposed on the destination substrate. A stamp with a component adhered to the stamp is provided. The component comprises a stamp side in contact with the stamp and a post side opposite the stamp side, a circuit, and connection posts extending from the post side. Each of the connection posts is electrically connected to the circuit. The component is pressed into contact with the adhesive layer to adhere the component to the destination substrate and to form a printed structure having a volume defined between the component and the destination substrate. The stamp is removed and the printed structure is processed to fill or reduce the volume.

A semiconductor device may include a first plate-like element having a first substantially planar connection surface with a first connection pad and a second plate-like element having a second substantially planar connection surface with a second connection pad corresponding to the first connection pad. The device may also include a connection electrically and physically coupling the first and second plate-like elements and arranged between the first and second connection pads. The connection may include a deformed elongate element arranged on the first connection pad and extending toward the second connection pad and solder in contact with the second connection pad and the elongate element.

A semiconductor device may include a first plate-like element having a first substantially planar connection surface with a first connection pad and a second plate-like element having a second substantially planar connection surface with a second connection pad corresponding to the first connection pad. The device may also include a connection electrically and physically coupling the first and second plate-like elements and arranged between the first and second connection pads. The connection may include a deformed elongate element arranged on the first connection pad and extending toward the second connection pad and solder in contact with the second connection pad and the elongate element.

Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I):
(M.sub.1−M.sub.2)/M.sub.1×100≥1.0  (I)
[in Formula (I), M.sub.1 represents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and M.sub.2 represents a non-volatile content in the joining material.]

An integrated circuit package may be formed having a heat transfer fluid chamber, wherein the heat transfer fluid chamber may be positioned to allow a heat transfer fluid to directly contact an integrated circuit device within the integrated circuit package. In one embodiment, a first surface of the integrated circuit device may be electrically attached to a first substrate. The first substrate may then may be electrically attached to a second substrate, such that the integrated circuit device is between the first substrate and the second substrate. The second substrate may include a cavity, wherein the heat transfer fluid chamber may be formed between a second surface of the integrated circuit device and the cavity of the second substrate. Thus, at least a portion of a second surface of the integrated circuit device is exposed to the heat transfer fluid which flows into the heat transfer fluid chamber.

An integrated circuit package may be formed having a heat transfer fluid chamber, wherein the heat transfer fluid chamber may be positioned to allow a heat transfer fluid to directly contact an integrated circuit device within the integrated circuit package. In one embodiment, a first surface of the integrated circuit device may be electrically attached to a first substrate. The first substrate may then may be electrically attached to a second substrate, such that the integrated circuit device is between the first substrate and the second substrate. The second substrate may include a cavity, wherein the heat transfer fluid chamber may be formed between a second surface of the integrated circuit device and the cavity of the second substrate. Thus, at least a portion of a second surface of the integrated circuit device is exposed to the heat transfer fluid which flows into the heat transfer fluid chamber.