H01L2224/8121

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

In one example, a semiconductor device comprises a substrate comprising a dielectric, a first conductor on a top side of the dielectric, and a second conductor on a bottom side of the dielectric, wherein the dielectric has an aperture, and the first conductor comprises a partial via contacting a pad of the second conductor through the aperture, an electronic device having an interconnect electrically coupled to the first conductor, and an encapsulant on a top side of the substrate contacting a side of the electronic device. Other examples and related methods are also disclosed herein.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

In one example, a semiconductor device comprises a substrate comprising a dielectric, a first conductor on a top side of the dielectric, and a second conductor on a bottom side of the dielectric, wherein the dielectric has an aperture, and the first conductor comprises a partial via contacting a pad of the second conductor through the aperture, an electronic device having an interconnect electrically coupled to the first conductor, and an encapsulant on a top side of the substrate contacting a side of the electronic device. Other examples and related methods are also disclosed herein.

Substrate device, electronic apparatus, and method for manufacturing substrate device
10892241 · 2021-01-12 · ·

To provide a substrate device, an electronic apparatus, and a method for manufacturing a substrate device that can make large the gap between a semiconductor substrate and a wiring substrate by making the height of a solder ball high. A substrate device includes a substrate; an electrical connection unit provided on the substrate; a metal post provided on the electrical connection unit; and a metal film that is provided in one body from a tip surface to at least part of a side surface of the metal post and of which wettability to a solder material is lower than wettability to the solder material of the metal post.

Acrylic composition for encapsulation, sheet material, laminated sheet, cured object, semiconductor device, and process for producing semiconductor device

The acrylic composition for sealing contains an acrylic compound, a polyphenylene ether resin including a radical-polymerizable substituent at a terminal, an inorganic filler, and a thermal radical polymerization initiator.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

In one example, an electronic device structure includes a substrate having a conductive structure adjacent to a surface. The conductive structure can include a plurality of conductive pads. First and second electronic devices are disposed adjacent to the top surface. The first electronic device is interposed between a first conductive pad and a second conductive pad, and the second electronic device is interposed between the second conductive pad and a third conductive pad. A continuous wire structure including a first bond structure is connected to the first conductive pad, a second bond structure is connected to the second conductive pad, a third bond structure is connected to the third conductive pad, a first wire portion is interconnected between the first bond structure and the second bond structure and disposed to overlie the first electronic device, and a second wire portion is interconnected between the second bond structure and the third bond structure and disposed to overlie the second electronic device. Other examples and related methods are also disclosed herein.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

In one example, an electronic device structure includes a substrate having a conductive structure adjacent to a surface. The conductive structure can include a plurality of conductive pads. First and second electronic devices are disposed adjacent to the top surface. The first electronic device is interposed between a first conductive pad and a second conductive pad, and the second electronic device is interposed between the second conductive pad and a third conductive pad. A continuous wire structure including a first bond structure is connected to the first conductive pad, a second bond structure is connected to the second conductive pad, a third bond structure is connected to the third conductive pad, a first wire portion is interconnected between the first bond structure and the second bond structure and disposed to overlie the first electronic device, and a second wire portion is interconnected between the second bond structure and the third bond structure and disposed to overlie the second electronic device. Other examples and related methods are also disclosed herein.

SUBSTRATE, ELECTRONIC SUBSTRATE, AND METHOD FOR PRODUCING ELECTRONIC SUBSTRATE
20200373268 · 2020-11-26 · ·

A substrate is capable of effectively reinforcing a connecting portion between an electronic component and the substrate. The substrate is a substrate on which a first electronic component having a plurality of bumps is to be mounted, and includes a base portion including an insulator and having, on the upper face thereof, at least one groove portion configured to store a tip portion of at least one of the bumps, and includes an electrode formed on at least the bottom face of the groove portion.

Method of forming an electronic device structure having an electronic component with an on-edge orientation and related structures

A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

Method of forming an electronic device structure having an electronic component with an on-edge orientation and related structures

A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
20200357759 · 2020-11-12 ·

Even in a case where a pad becomes smaller, solder connection strength is improved. A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.