The present disclosure is directed to a compact vertical oven for reflow of solder bumps for backend processes in semiconductor wafer assembly and packaging. This disclosure describes a vertical oven which uses a plurality of wafers (e.g., an example value is 50-100 wafers) in a batch with controlled injection of the reducing agent (e.g. formic acid), resulting in a process largely free of contamination. This disclosure describes controlled formic acid flow through a vertical system using laminar flow technology in a sub-atmospheric pressure environment, which is not currently available in the industry. The efficacy of the process depends on effective formic acid vapor delivery, integrated temperature control during heating and cooling, and careful design of the vapor flow path with exhaust. Zone-dependent reaction dynamics managed by vapor delivery process, two-steps temperature ramp control, and controlled cooling process and formic acid content ensures the effective reaction without any flux.

A module includes a substrate, a plurality of components on an upper surface of the substrate, a component on a lower surface of the substrate, solder balls on the lower surface, sealing resin layers stacked on the upper surface and the lower surface of the substrate, and a shield film covering a side surface and an upper surface of the module. Part of each solder ball is exposed from a surface of the sealing resin layer, and the exposed parts are shaped to protrude from the sealing resin layer. The module can be connected to a mother substrate by connecting the protruding parts of the solder balls. There are gaps between the solder balls and the sealing resin layer, and the occurrence of cracks in the solder balls can be suppressed by reducing stress arising from a difference in thermal expansion coefficient between the solder and the resin.

A module includes a substrate, a plurality of components on an upper surface of the substrate, a component on a lower surface of the substrate, solder balls on the lower surface, sealing resin layers stacked on the upper surface and the lower surface of the substrate, and a shield film covering a side surface and an upper surface of the module. Part of each solder ball is exposed from a surface of the sealing resin layer, and the exposed parts are shaped to protrude from the sealing resin layer. The module can be connected to a mother substrate by connecting the protruding parts of the solder balls. There are gaps between the solder balls and the sealing resin layer, and the occurrence of cracks in the solder balls can be suppressed by reducing stress arising from a difference in thermal expansion coefficient between the solder and the resin.

A microelectronic component comprises a substrate having at least one bond pad on a surface thereof and a metal pillar structure on the at least one bond pad, the metal pillar structure comprising a metal pillar on the at least one bond pad and a solder material having a portion within a reservoir within the metal pillar and another portion protruding from an end of the metal pillar opposite the at least one bond pad. Methods for forming the metal pillar structures, metal pillar structures, assemblies and systems incorporating the metal pillar structures are also disclosed.

A microelectronic component comprises a substrate having at least one bond pad on a surface thereof and a metal pillar structure on the at least one bond pad, the metal pillar structure comprising a metal pillar on the at least one bond pad and a solder material having a portion within a reservoir within the metal pillar and another portion protruding from an end of the metal pillar opposite the at least one bond pad. Methods for forming the metal pillar structures, metal pillar structures, assemblies and systems incorporating the metal pillar structures are also disclosed.

A package structure and a method for manufacturing a package structure are provided. The package structure includes a first wiring structure and at least one electronic device. The at least one electronic device is connected to the first wiring structure through at least two joint structures. The at least two joint structures respectively include different materials.

A package structure and a method for manufacturing a package structure are provided. The package structure includes a first wiring structure and at least one electronic device. The at least one electronic device is connected to the first wiring structure through at least two joint structures. The at least two joint structures respectively include different materials.

Electronic assemblies may be fabricated with interconnects of different types present in multiple locations and comprising fused copper nanoparticles. Each interconnect or a portion thereof comprises a bulk copper matrix formed from fusion of copper nanoparticles or a reaction product formed from copper nanoparticles. The interconnects may comprise a copper-based wire bonding assembly, a copper-based flip chip connection, a copper-based hermetic seal assembly, a copper-based connector between an IC substrate and a package substrate, a copper-based component interconnect, a copper-based interconnect comprising via copper for establishing electrical communication between opposite faces of a package substrate, a copper-based interconnect defining a heat channel formed from via copper, and any combination thereof.

A semiconductor device is provided that has high electromagnetic wave shielding properties while exhibiting good heat dissipation. The semiconductor device includes a semiconductor package bonded onto a circuit board, an electromagnetic wave absorbing layer covering surfaces of the semiconductor package other than a surface bonded to the circuit board, and an electromagnetic wave reflecting layer covering the electromagnetic wave absorbing layer on a side remote from the semiconductor package, in which the electromagnetic wave absorbing layer is made of resin containing magnetic particles or carbon, and the electromagnetic wave reflecting layer is made of resin containing conductive particles.

A semiconductor device is provided that has high electromagnetic wave shielding properties while exhibiting good heat dissipation. The semiconductor device includes a semiconductor package bonded onto a circuit board, an electromagnetic wave absorbing layer covering surfaces of the semiconductor package other than a surface bonded to the circuit board, and an electromagnetic wave reflecting layer covering the electromagnetic wave absorbing layer on a side remote from the semiconductor package, in which the electromagnetic wave absorbing layer is made of resin containing magnetic particles or carbon, and the electromagnetic wave reflecting layer is made of resin containing conductive particles.