Embodiments relate to the design of an electronic device capable of preventing a lateral motion between a first body and a second body. The device comprises a first body comprising one or more atomic force microscopy (AFM) tips protruding from a first surface of the first body. The device further comprises a second body comprising one or more electrical contacts on a second surface of the second body. The second surface faces the first surface. The one or more electrical contacts pierced by the AFM tips of the first surface to prevent a lateral motion between the first body and the second body.

A connection arrangement for forming a component carrier structure is disclosed. The connection arrangement includes a first electrically conductive connection element and a second electrically conductive connection element. The first connection element and the second connection element are configured such that, upon connecting the first connection element with the second connection element along a connection direction, a form fit is established between the first connection element and the second connection element that limits a relative motion between the first connection element and the second connection element in a plane perpendicular to the connection direction. A component carrier and a method of forming a component carrier structure are also disclosed.

Embodiments relate to the design of an electronic device capable of preventing a lateral motion between a first body and a second body. The device comprises a first body comprising one or more atomic force microscopy (AFM) tips protruding from a first surface of the first body. The device further comprises a second body comprising one or more electrical contacts on a second surface of the second body. The second surface faces the first surface. The one or more electrical contacts pierced by the AFM tips of the first surface to prevent a lateral motion between the first body and the second body.

The present disclosure relates to an integrated chip structure having a first copper pillar disposed over a metal pad of an interposer substrate. The first copper pillar has a sidewall defining a recess. A nickel layer is disposed over the first copper pillar and a solder layer is disposed over the first copper pillar and the nickel layer. The solder layer continuously extends from directly over the first copper pillar to within the recess. A second copper layer is disposed between the solder layer and a second substrate.

A stamp for micro-transfer printing includes a support having a support stiffness and a support coefficient of thermal expansion (CTE). A pedestal layer is formed on the support, the pedestal layer having a pedestal layer stiffness that is less than the support stiffness and a pedestal layer coefficient of thermal expansion (CTE) that is different from the support coefficient of thermal expansion (CTE). A stamp layer is formed on the pedestal layer, the stamp layer having a body and one or more protrusions extending from the body in a direction away from the pedestal layer. The stamp layer has a stamp layer stiffness that is less than the support stiffness and a stamp layer coefficient of thermal expansion that is different from the support coefficient of thermal expansion.

A method is disclosed for electrically bonding a first semiconductor component to a second semiconductor component, both components including arrays of contact areas. In one aspect, prior to bonding, layers of an intermetallic compound are formed on the contact areas of the second component. The roughness of the intermetallic layers is such that the intermetallic layers include cavities suitable for insertion of a solder material in the cavities, under the application of a bonding pressure, when the solder is at a temperature below its melting temperature. The components are aligned and bonded, while the solder material is applied between the two. Bonding takes place at a temperature below the melting temperature of the solder. The bond can be established only by the insertion of the solder into the cavities of the intermetallic layers, and without the formation of a second intermetallic layer.

A method for directly bonding semiconductor devices from multiple carrier substrates to a target substrate using relative alignments of semiconductor contacts to substrate contacts, as well as relative heights of semiconductor contacts to substrate contacts. The method may include directly bonding a subset of semiconductor devices on a first carrier substrate with a first alignment to a subset of substrate contacts, and directly bonding a subset of second semiconductor device on a second carrier substrate with a second alignment to a subset of substrate contacts. The method may include directly bonding a subset of semiconductor devices with a first height on a first carrier substrate to a first subset of substrate contacts, followed by directly bonding a second subset of second semiconductor devices with a second height on a second carrier substrate to a second subset of substrate contacts.

The present disclosure, in some embodiments, relates to a bump structure. The bump structure includes a conductive layer and a solder layer. The solder layer is disposed vertically below and laterally between portions of the conductive layer along a cross-section. The conductive layer is continuous between the portions.

A chip packaging structure includes a chip and a film substrate. The chip is formed with a gold bump, and the film substrate is formed with an inner lead, wherein the gold bump includes a first bonding surface and a plurality of side walls. The gold bump is electrically connected to the inner lead through a eutectic material coverage layer, and the first bonding surface and at least one of the plurality of side walls are covered by the eutectic material coverage layer.

In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.