A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Discussed is a device for self-assembling semiconductor light-emitting diodes for placing the semiconductor light-emitting diodes at predetermined positions on a substrate by using an electric field and a magnetic field, the substrate being accommodated in an assembly chamber accommodating a fluid, the device including a substrate chuck configured to dispose the substrate at an assembly position, wherein the substrate chuck includes a substrate support part configured to support the substrate on which an assembly electrode is formed, a rotating part configured to support the substrate support part, and a controller configured to control driving of the substrate chuck, wherein the substrate support part includes micro-holes for injecting a gas between the fluid and the substrate, and wherein the controller controls whether the gas is injected through the micro-holes according to whether the substrate is raised or lowered.

Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.

The present invention discloses a flexible integrated display panel module and manufacturing method thereof, the flexible integrated display panel module includes a flexible integrated display substrate, which including an integrated area, an active area and a non-display disposed at one side of the integrated area, the integrated area divided into a plurality of areas, used to defined as a corresponding functional area. The functional area includes: a display wiring functional area and a plurality of direct on-cell touch control wiring functional areas disposed on both sides of the display functional area.

Discussed is a device for self-assembling semiconductor light-emitting diodes includes a substrate chuck that is provided in an assembly chamber and supports a substrate and disposes the substrate at an assembly position, wherein the substrate chuck sucks or injects a gas present between the substrate and a fluid during loading and unloading of the substrate.

An arrangement is disclosed. In one example, the arrangement of a conductor and an aluminum layer soldered together comprises a substrate and the aluminum layer disposed over the substrate. The aluminum forms a first bond metal. An intermetallic compound layer is disposed over the aluminum layer. A solder layer is disposed over the intermetallic compound layer, wherein the solder comprises a low melting majority component. The conductor is disposed over the solder layer, wherein the conductor has a soldering surface which comprises a second bond metal. The intermetallic compound comprises aluminum and the second bond metal and is predominantly free of the low melting majority component.

A method of manufacturing a semiconductor device includes the following steps. A device wafer having a product-obtaining part and an edge part surrounding the product-obtaining part is provided. A passivation layer is formed to cover the device wafer. A first oxide cap layer is formed to cover the passivation layer. An edge trimming process is performed to polish an edge part of the first oxide cap layer, an edge part of the passivation layer and the edge part of the device wafer. A removing process is performed to remove the first oxide cap layer after the edge trimming process is performed. A second oxide cap layer is formed to cover the first oxide cap layer and the edge part of the device wafer.

A solder joint in which an electronic component with a back metal is bonded to a substrate by a solder alloy. The solder alloy includes: a solder alloy layer having an alloy composition consisting of, in mass %: Ag: 2 to 4%, Cu: 0.6 to 2%, Sb: 9.0 to 12%, Ni: 0.005 to 1%, optionally Co: 0.2% or less and Fe: 0.1% or less, with the balance being Sn; an Sn—Sb intermetallic compound phase; a back metal-side intermetallic compound layer formed at an interface between the back metal and the solder alloy; and a substrate-side intermetallic compound layer formed at an interface between the substrate and the solder alloy. The solder alloy layer exists at least one of between the Sn—Sb intermetallic compound phase and the back metal-side intermetallic compound layer, and between the Sn—Sb intermetallic compound phase and the substrate-side intermetallic compound layer.

Discussed is a device for self-assembling semiconductor light-emitting diodes, in which the device includes an assembly chamber having a space for accommodating a fluid; a magnetic field forming part having at least one magnet for applying a magnetic force to the semiconductor light-emitting diodes dispersed in the fluid and a moving part for changing positions of the at least one magnet so that the semiconductor light-emitting diodes move in the fluid; a substrate chuck having a substrate support part configured to support a substrate, and a vertical moving part for lowering the substrate so that one surface of the substrate is in contact with the fluid in a state in which the substrate is supported by the substrate support part; and a controller for controlling a movement of the magnetic field forming part and the substrate chuck, wherein the controller controls a depth at which the substrate is submerged in the fluid based on a degree of warping of the substrate.

Discussed is a device for self-assembling semiconductor light-emitting diodes includes a substrate chuck that is provided in an assembly chamber and supports a substrate and disposes the substrate at an assembly position, wherein the substrate chuck sucks or injects a gas present between the substrate and a fluid during loading and unloading of the substrate.