H01L2224/83022

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR MODULE, AND SEMICONDUCTOR DEVICE
20250096183 · 2025-03-20 · ·

A method includes preparing a substrate; cleaning a chip mounting surface of the substrate; supplying a homogenized die-bonding paste onto the chip mounting surface, and attaching a semiconductor chip on the chip mounting surface via the homogenized die-bonding paste, the semiconductor chip having a front surface, a back surface opposite the front surface, and a first electrode formed on the front surface; curing the homogenized die-bonding paste; electrically connecting the first electrode with a first terminal of the substrate via a first wire; and sealing the semiconductor chip and the first wire with a sealing resin, wherein the homogenized die-bonding paste used in supplying is initially provided as an unstirred die-bonding paste including a plurality of Ag fillers, and wherein, in supplying, the homogenized die-bonding paste is supplied onto the chip mounting surface after the unstirred die-bonding paste along with Ag fillers is stirred for a first predetermined time period.

Bonded processed semiconductor structures and carriers
09553014 · 2017-01-24 · ·

Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods.

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
20250259959 · 2025-08-14 · ·

Semiconductor packages and their fabrication methods are provided. A semiconductor package includes a first redistribution layer, a first semiconductor chip on the first redistribution layer, a first adhesive layer on the first semiconductor chip, a first molding layer on the first redistribution layer, a second semiconductor chip on the first adhesive layer, a second adhesive layer on the second semiconductor chip, a second molding layer on the first molding layer, and a second redistribution layer on the second molding layer. The first semiconductor chip includes a first connection terminal that penetrates the first adhesive layer such as to be exposed at a top surface of the first adhesive layer. The second semiconductor chip includes a second connection terminal that penetrates the second molding layer such as to be coupled to the first connection terminal.