An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields.

The present invention includes: a heat plate for heating a lower side of a substrate sliding on an upper surface; and a heat block for heating the heat plate. The heat block includes an air heating flow path for heating air which flows in from a bottom surface side and causing the air to flow out to the heat plate side, the heat plate includes air holes for discharging the air heated by the air heating flow path from the upper surface, the heated air discharged from the air holes forms a heated air atmosphere above the heat plate, and the substrate is transported through the heat air atmosphere. Thereby, curved deformation of the substrate is suppressed.

Embodiments of the present disclosure include method for sequentially mounting multiple semiconductor devices onto a substrate having a composite metal structure on both the semiconductor devices and the substrate for improved process tolerance and reduced device distances without thermal interference. The mounting process causes “selective” intermixing between the metal layers on the devices and the substrate and increases the melting point of the resulting alloy materials.

There is provided a bonding paste capable of forming a uniform bonding layer by reducing occurrence of voids at edges even when a bonding area is large, and bonding method using the paste, and provides a metal paste for bonding containing at least metal nanoparticles (A) having a number average primary particle size of 10 to 100 nm, wherein a cumulative weight loss value (L.sub.100) when a temperature is raised from 40° C. to 100° C. is 75 or less, and a cumulative weight loss value (L.sub.150) when a temperature is raised from 40° C. to 150° C. is 90 or more, and a cumulative weight loss value (L.sub.200) when a temperature is raised from 40° C. to 200° C. is 98 or more, based on 100 cumulative weight loss value (L.sub.700) when the paste is heated from 40° C. to 700° C. at a heating rate of 3° C./min in a nitrogen atmosphere.

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

A semiconductor die stack includes a base die and core dies stacked over the base die. Each of the base die and the core dies include a semiconductor substrate, a front side passivation layer formed over a front side of the semiconductor substrate, a back side passivation layer over a back side of the semiconductor substrate, a through-via vertically penetrating the semiconductor substrate and the front side passivation layer, and a bump, a support pattern, and a bonding insulating layer formed over the front side passivation layer. Top surfaces of the bump, the support pattern, and the bonding insulating layer are co-planar. The bump is vertically aligned with the through-via. The support pattern is spaced apart from the through-via and the bump. The support pattern includes a plurality of first bars that extend in parallel with each other in a first direction and a plurality of second bars that extend in parallel with each other in a second direction.

In a circuit forming device, a resin laminated body is formed by curing an ultraviolet curable resin ejected by an ejecting device. Then, ultraviolet curable resin is ejected into a cavity of the resin laminated body, and an electronic component is placed on the ultraviolet curable resin. Then, the electronic component is cured and the electronic component is fixed.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, including various adhesives applications.