In some embodiments, the present disclosure relates to a package assembly having a bump on a first substrate. A molding compound is on the first substrate and contacts sidewalls of the bump. A no-flow underfill layer is on a conductive region of a second substrate. The no-flow underfill layer and the conductive region contact the bump. A mask layer is arranged on the second substrate and laterally surrounds the no-flow underfill layer. The no-flow underfill layer contacts the substrate between the conductive region and the mask layer.

A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

Disclosed are exemplary embodiments of systems and methods of applying thermal interface materials (TIMs). The thermal interface materials may be applied to a wide range of substrates and components, such as lids or integrated heat spreaders of integrated circuit (IC) packages, board level shields, heat sources (e.g., a central processing unit (CPU), etc.), heat removal/dissipation structures or components (e.g., a heat spreader, a heat sink, a heat pipe, a vapor chamber, a device exterior case or housing, etc.), etc.

A method of manufacturing a packaged semiconductor device includes forming an assembly by placing a semiconductor die over a substrate with a die attach material between the semiconductor die and the substrate. A conformal structure which includes a pressure transmissive material contacts at least a portion of a top surface of the semiconductor die. A pressure is applied to the conformal structure and in turn, the pressure is transmitted to the top surface of the semiconductor die by the pressure transmissive material. While the pressure is applied, concurrently encapsulating the assembly with a molding compound and exposing the assembly to a temperature that is sufficient to cause the die attach material to sinter.

A method for attaching a semiconductor die to a substrate includes providing a substrate that includes an attachment layer at a surface of the substrate. The attachment layer is covered by a protective flash plating layer. The protective flash plating layer has a reflow temperature less than or equal to a reflow temperature of the attachment layer. The method further includes preheating the substrate to a temperature greater than or equal to a reflow temperature of the attachment layer, attaching a semiconductor die to the attachment layer, and cooling the substrate and semiconductor die.

An embodiment related to a device. The device includes a first die with first and second die surfaces. The second die surface is bonded to a first die attach pad (DAP) disposed on a first substrate surface of a package substrate and the first die surface includes a first die contact pad. The device also includes a first clip bond including a first clip bond horizontal planar portion attached to the first die contact pad on the first die surface, and a first clip bond vertical portion disposed on an edge of the first clip bond horizontal planar portion. The first clip bond vertical portion is attached to a first substrate bond pad on the first substrate surface. The device further includes a first conductive clip-die bonding layer with spacers on the first die contact pad of the first die. The first conductive clip-die bonding layer bonds the first clip bond horizontal planar portion to the first die contact pad, and the spacers maintain a uniform Bond Line Thickness (BLT) of the first conductive clip-die bonding layer.

A method for manufacturing an electronic component includes preparing a mounting substrate provided with a first region to mount an electronic component thereon and a second region having conductivity, covering the second region with resin, applying a metal paste on the first region, mounting the electronic component on the first region with the metal paste, and removing the resin covering the second region. The mounting includes heating the mounting substrate to cure the metal paste with the electronic components being placed on the metal paste applied on the first region. The resin peeled from the second region by the heating is removed in the removing.

An object of the present invention is to provide an electrically conductive paste and a sintered body thereof having a low electric resistance value and excellent electrical conductivity when made into a sintered body. An electrically conductive paste comprising: a flake-like silver powder having a median diameter D50 of 15 μm or less; a silver powder having a median diameter D50 of 25 μm or more; and a solvent, wherein the content of the flake-like silver powder is 15 to 70 parts by mass and the content of the silver powder having a median diameter D50 of 25 μm or more is 30 to 85 parts by mass based on 100 parts by mass in total of the flake-like silver powder and the silver powder having a median diameter D50 of 25 μm or more.

Manufacturing a handle substrate includes: providing a support substrate having a receiving face; depositing an anti-adherent formulation including a first solvent over the receiving face of the support substrate so as to form a film; depositing a liquid formulation over a face of the film, before the complete evaporation of the first solvent, the liquid formulation being intended to form an adhesive layer; and evaporating the first solvent so as to obtain an anti-adherent film from the film in order to obtain the handle substrate and to obtain a bonding energy between the anti-adherent film and the adhesive layer lower than about 1.2 J/m.sup.2. The step of depositing of a liquid formulation is carried out when the face of the film has a water drop angle smaller than 65 degrees, so as to avoid any risk of dewetting of the liquid formulation.

A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material, in which a width of an upper end of the upper conductive material is greater than a width of the corresponding upper conductive material.