H01L2224/83192

Package structure and manufacturing method thereof

A package structure including a circuit board and a heat generating element is provided. The circuit board includes a plurality of circuit layers and a composite material layer. A thermal conductivity of the composite material layer is between 450 W/mK and 700 W/mK. The heat generating element is disposed on the circuit board and electrically connected to the circuit layers. Heat generated by the heat generating element is transmitted to an external environment through the composite material layer.

Adhesive member and display device including the same
11545461 · 2023-01-03 · ·

A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball; and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

MOUNTING APPARATUS
20220415845 · 2022-12-29 · ·

The present invention provides a mounting apparatus, including a bonding stage holding a substrate on which a semiconductor chip is arranged; a base stand; a mounting head mounted with a pressing tool that presses the semiconductor chip on the substrate; and a film arranging mechanism provided on the base stand and moving a cover film along the bonding stage to arrange the cover film between the semiconductor chip pressed by the substrate and the pressing tool. The film arranging mechanism includes film guides guiding the cover film and defining a height with respect to the bonding stage; and lifting mechanisms connected to the film guides via springs and lifting and lowering the film guides with respect to the bonding stage.

Electronic package for integrated circuits and related methods

Electronic packages and related methods are disclosed. An example electronic package apparatus includes a substrate and an electronic component. A protective material is positioned on a first surface, a second surface and all side surfaces of the electronic component to encase the electronic component. An enclosure is coupled to the substrate to cover the protective material and the electronic component.

Semiconductor package comprising a heat dissipation structure and an outer peripheral frame used as a resin flow barrier

A semiconductor package includes: an insulating substrate; a first semiconductor chip; a second semiconductor chip with a thickness smaller than a thickness of the first semiconductor chip; a heat radiation member in which a main surface located on an opposite side of an active surface of the first semiconductor chip and an active surface of the second semiconductor chip, respectively, are bonded to a lower surface; and a sealing resin having contact with at least part of a side wall of the heat radiation member without being raised over an upper surface of the heat radiation member to seal the first and second semiconductor chips on the insulating substrate, wherein in the heat radiation member, a thickness of a first bonding part to which the first semiconductor chip is bonded is smaller than a thickness of a second bonding part to which the second semiconductor chip is bonded.

Cascode semiconductor

This disclosure relates to a cascode HEMT semiconductor device including a lead frame, a die pad attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.

Light emitting device having cantilever electrode, LED display panel and LED display apparatus having the same
11538784 · 2022-12-27 · ·

A light emitting device including at least one LED stack, electrode pads disposed on the LED stack, and cantilever electrodes disposed on the electrode pads, respectively, in which each of the cantilever electrodes has a fixed edge that is fixed to one of the electrode pads and a free standing edge that is spaced apart from the one of the electrode pads.

Leadframe with ground pad cantilever

An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

INTELLIGENT POWER MODULE
20220406693 · 2022-12-22 ·

An intelligent power module includes: an encapsulating material structure; a lead frame which is at least partially encapsulated inside the encapsulating material structure, wherein all portions of the lead frame encapsulated inside the encapsulating material structure are at a same planar level; and a heat dissipation structure, which is connected to the lead frame.

Copper paste for pressureless bonding, bonded body and semiconductor device

A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 μm and less than or equal to 0.8 μm, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 μm and less than or equal to 50 μm, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.