A method for forming an integrated circuit device includes providing a first substrate having a first conductive portion, providing a second substrate having a second conductive portion, performing a first chemical reaction to form a first expanding pad on the first conductive portion to provide a first expanded contact area, performing a second chemical reaction to form a second expanding pad on the second conductive portion to provide a second expanded contact area, and bonding the first substrate to the second substrate with a bonding structure.

A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.

Generally described, one or more embodiments are directed to a leadframe package having a plurality of leads, a die pad, a semiconductor die coupled to the die pad, and encapsulation material. An inner portion of the die pad includes a perimeter portion that includes a plurality of protrusions that are spaced apart from each other. The protrusions aid in locking the die pad in the encapsulation material. The plurality of leads includes upper portions and base portions. The base portion of the plurality of leads are offset (or staggered) relative to the plurality of protrusions of the die pad. In particular, the base portions extend longitudinally toward the die pad and are located between respective protrusions. The upper portions of the leads include lead locks that extend beyond the base portions in a direction of adjacent leads. The lead locks and the protrusion in the die pad aid in locking the leads and the die pad in the encapsulation material.

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Disclosed is a semiconductor package including a first semiconductor chip on a substrate, a second semiconductor chip on the substrate and laterally spaced apart from the first semiconductor chip, a dummy chip on the first semiconductor chip, and a dielectric layer between the first semiconductor chip and the dummy chip. A top surface of the first semiconductor chip may be lower than a top surface of the second semiconductor chip. The dielectric layer may include an inorganic dielectric material.

According to an aspect of the inventive concept, there is provided a die-to-wafer bonding structure including a die having a first test pad, a first bonding pad formed on the first test pad, and a first insulating layer, the first bonding pad penetrates the first insulating layer. The structure may further include a wafer having a second test pad, a second bonding pad formed on the second test pad, and a second insulating layer, the second bonding pad penetrates the second insulating layer. The structure may further include a polymer layer surrounding all side surfaces of the first bonding pad and all side surfaces of the second bonding pad, the polymer layer being arranged between the die and the wafer. Additionally, the wafer and the die may be bonded together.

In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.

A method of forming a semiconductor structure includes following steps. A first wafer is bonded to a second wafer, in which the first wafer includes a first substrate and a first conductive pad above a first surface of the first substrate, and the second wafer comprises a second substrate and a second conductive pad above a second surface of the second substrate. A mask layer is formed above the first substrate. The mask layer and the first substrate are etched to form a first opening in the first substrate. A sacrificial spacer is formed in the first substrate at a sidewall of the first opening. The first conductive pad is etched to form a second opening communicated to the first opening. A conductive material is filled in the first opening and the second opening to form a conductive structure interconnecting the first and second conductive pads.

A method of forming a semiconductor structure includes following steps. A first wafer is bonded to a second wafer, in which the first wafer includes a first substrate and a first conductive pad above a first surface of the first substrate, and the second wafer comprises a second substrate and a second conductive pad above a second surface of the second substrate. A mask layer is formed above the first substrate. The mask layer and the first substrate are etched to form a first opening in the first substrate. A sacrificial spacer is formed in the first substrate at a sidewall of the first opening. The first conductive pad is etched to form a second opening communicated to the first opening. A conductive material is filled in the first opening and the second opening to form a conductive structure interconnecting the first and second conductive pads.

A semiconductor device according to the present embodiment includes a circuit board comprising a plurality of electrodes provided on a first surface, a first resin layer provided on the first surface around the electrodes, and a second resin layer provided on the first resin layer. A first semiconductor chip is connected to a first one of the electrodes. A second semiconductor chip is provided above the first semiconductor chip, being larger than the first semiconductor chip, and is connected to a second one of the electrodes via a metal wire. A third resin layer is provided between the first semiconductor chip and the second semiconductor chip and between the second resin layer and the second semiconductor chip, and covers the first semiconductor chip.