A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

There is provided a connection structure of a circuit member including: a first circuit member having a first main surface provided with a first electrode; a second circuit member having a second main surface provided with a second electrode; and a joining portion which is interposed between the first main surface and the second main surface, in which the joining portion has a solder portion which electrically connects the first electrode and the second electrode to each other, in which the solder portion contains a bismuth-indium alloy, and in which an amount of bismuth contained in the bismuth-indium alloy exceeds 20% by mass and is equal to or less than 80% by mass.

Disclosed herein are a light emitting device package, a backlight unit, an illumination apparatus, and a method of manufacturing a light emitting device package capable of being used for a display application or an illumination application. The light emitting device package includes: a flip-chip type light emitting device having a first terminal and a second terminal installed therebeneath; a substrate having a first electrode formed at one side of an electrode separating space and a second electrode formed at the other side thereof; a first conductive bonding member installed on the first electrode of the substrate so as to be electrically connected to the first terminal of the light emitting device; a second conductive bonding member installed on the second electrode of the substrate so as to be electrically connected to the second terminal of the light emitting device; a reflection encapsulant molded and installed on the substrate so as to form a reflection cup part reflecting light generated in the light emitting device and filled in the electrode separating space to form an electrode separating part; and a filler filled between the reflection cup part and the first and second conductive bonding members.

The present invention provides a conductive bonded assembly utilizing particles of Ni or an Ni alloy as conductive particles so as to enable firing under non-pressing conditions and further realize an excellent bonding strength, electron migration characteristic, and ion migration characteristic. The conductive bonded assembly of the present invention is a conductive bonded assembly of an electronic component which has a first bondable member (for example, electrode material), a second bondable member (for example, a semiconductor device on an Si or SiC substrate), and a conductive bonding layer bonding these bondable members together, where the bonding layer is an Ni sintered body formed by a sintered body of Ni particles which has a porosity of 30% or less, and, further, can be obtained by heating and sintering the Ni particles at the time of firing where the Ni sintered bonding layer is formed.

A semiconductor package can include a semiconductor die having an integrated circuit, a first die surface, and an opposite second die surface. A packaging can be attached to the die and have a holder surface opposite the first die surface. A heat spreader can be configured to cover the second die surface and the packaging surface and can be attached thereto by a layer of adhesive positioned between the heat spreader and the semiconductor die. A semiconductor package array can include an array of semiconductor dies and a heat spreader configured to cover each semiconductor die. A conductive lead can be electrically connected to the integrated circuit in a semiconductor die and can extend from the first die surface. Manufacturing a semiconductor package can include applying thermally conductive adhesive to the heat spreader and placing the heat spreader proximate the semiconductor die.

A semiconductor device according to the present embodiment includes a circuit board comprising a plurality of electrodes provided on a first surface, a first resin layer provided on the first surface around the electrodes, and a second resin layer provided on the first resin layer. A first semiconductor chip is connected to a first one of the electrodes. A second semiconductor chip is provided above the first semiconductor chip, being larger than the first semiconductor chip, and is connected to a second one of the electrodes via a metal wire. A third resin layer is provided between the first semiconductor chip and the second semiconductor chip and between the second resin layer and the second semiconductor chip, and covers the first semiconductor chip.

A first insulating film is applied onto a joining face of a semiconductor device including a connection terminal on a joining face, and the connection terminal is embedded inside the first insulating film. The second insulating film is formed on a joining target face of a joining target, which includes a connection target terminal on the joining target face, and the connection target terminal is embedded inside the second insulating film. The semiconductor device and the joining target are joined together by applying pressure and causing the semiconductor device and the joining target to make contact with each other.

A die and substrate assembly is disclosed for a die with electronic circuitry and a substrate. A sintered bonding layer of sintered metal is disposed between the die and the substrate. The sintered bonding layer includes a plurality of zones having different sintered metal densities. The plurality of zones are distributed along one or more horizontal axes of the sintered bonding layer, along one or more vertical axes of the sintered bonding layer or along both one or more horizontal and one or more vertical axes of the sintered bonding layer.

A device includes a chip assembled on an interposer. An electrically-insulating layer coats an upper surface of the interposer around the chip. First metal lines run on the upper surface of the interposer and are arranged between conductive elements of connection to the chip. An end of each first metal line is arranged to extend beyond a projection of the chip on the interposer. A thermally-conductive via connects the end of the first metal line to a heat sink supported at an upper surface of the device.

A method for manufacturing a semiconductor apparatus, including preparing a first substrate provided with a pad optionally having a plug and a second substrate or device provided with a plug, forming a solder ball on at least one of the pad or plug of first substrate and the plug of second substrate or device, covering at least one of a pad-forming surface of first substrate and a plug-forming surface of second substrate or device with a photosensitive insulating layer, forming an opening on the pad or plug of the substrate or device that has been covered with photosensitive insulating layer by lithography, pressure-bonding the second substrate or device's plug to the pad or plug of first substrate with the solder ball through the opening, electrically connecting pad or plug of first substrate to second substrate or device's plug by baking, and curing photosensitive insulating layer by baking.