A mounting method of an electronic device includes providing an electronic device which includes a semiconductor chip body including an upper surface, a lower surface opposite to the upper surface, and side surfaces connecting the upper surface and the lower surface, a plurality of bumps disposed on the lower surface, and an under-fill element disposed on at least one side surface. The method further includes mounting the electronic device on a printed circuit board including connecting pads formed thereon. The bumps of the semiconductor chip body are connected to the connecting pads. The method additionally includes heating the under-fill element to a predetermined temperature to form an under-fill layer between the lower surface of the semiconductor chip body and the printed circuit board.

A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.

The present invention relates to transient liquid phase sinter pastes for electronic interconnects, and sinter paste application and processing methods.

The present technology relates to a camera module and an electronic apparatus that can lower the risk of breakage. An imaging element has a light receiving surface to receive light, and is flip-chip mounted on a base. A joining material is joined to the optical back surface of the imaging element so that a space is formed between the joining material and a back-surface-side member provided on the side of the optical back surface on the opposite side of the imaging element from the light receiving surface. The present technology can be applied to camera modules and the like that capture images, for example.

A semiconductor package including an interposer substrate, first to third semiconductor chips on the interposer substrate to face each other, an underfill part between each of the first to third semiconductor chips and the interposer substrate, a first side-fill part extending upward from a lower end of side walls of the first to third semiconductor chips, and a second side-fill part between the side walls of the first to third semiconductor chips and extending from the first side-fill part to an upper end of the side walls of the first to third semiconductor chips may be provided.

A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.

A method of establishing conductive connections is disclosed. The method includes providing an integrated circuit die having a plurality of solder balls each of which has an oxide layer on an outer surface of the solder ball. The method also includes performing a heating process to heat at least the solder balls and applying a force causing each of a plurality of piercing bond structures on a substrate to pierce one of the solder balls and its associated oxide layer to thereby establish a conductive connection between the solder ball and the piercing bond structure.

A method of establishing conductive connections is disclosed. The method includes providing an integrated circuit die having a plurality of solder balls each of which has an oxide layer on an outer surface of the solder ball. The method also includes performing a heating process to heat at least the solder balls and applying a force causing each of a plurality of piercing bond structures on a substrate to pierce one of the solder balls and its associated oxide layer to thereby establish a conductive connection between the solder ball and the piercing bond structure.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.

A description is given of an electronic sandwich structure which has at least a first and a second part to be joined, which are sintered together by means of a sintering layer. The sintering layer is formed as a substantially uninterrupted connecting layer, the density of which varies in such a way that at least one region of higher density and at least one region of lower density alternate with one another. A description is also given of a method for forming a sintering layer of an electronic sandwich structure, in which firstly a sintering material layer is applied substantially continuously to a first part to be joined as a connecting layer, this sintering material layer is subsequently dried and, finally, alternating regions of higher density and of lower density of the connecting layer are produced by sintering the first part to be joined with the sintering layer on a second part to be joined.