A display device including pads; an anisotropic conductive film on the pads; and a connection member bonded to the pads through the film, the connection member including bumps, the film includes a supporting layer including a plurality of conductive particles having a part protruded from a first and second surface of the support layer; a first adhesive layer contacting the first surface and the part of each conductive particle protruding from the first surface; and a second adhesive layer contacting the second surface and the part of each conductive particle protruding from the second surface, and wherein the first or second adhesive layer is positioned at both of a first and second region of the display device, the first region being a region in which the pads and the bumps are overlapped and the second region being a region in which the pads and the bumps are not overlapped.

A semiconductor manufacturing apparatus includes a stage connected to a vacuum generator to suction a semiconductor wafer including a plurality of semiconductor chips; a suction control unit connected to a connecting portion of the stage and the vacuum generator to control the connection of the stage and the vacuum generator; a pickup unit picking up each of the plurality of semiconductor chips; and a control unit controlling movement and rotation of the pickup unit and controlling the suction control unit; wherein the pickup unit moves the semiconductor chip from the stage to a mounting position of a supporting substrate and adherers the semiconductor chip by the control unit.

A semiconductor manufacturing apparatus includes a stage connected to a vacuum generator to suction a semiconductor wafer including a plurality of semiconductor chips; a suction control unit connected to a connecting portion of the stage and the vacuum generator to control the connection of the stage and the vacuum generator; a pickup unit picking up each of the plurality of semiconductor chips; and a control unit controlling movement and rotation of the pickup unit and controlling the suction control unit; wherein the pickup unit moves the semiconductor chip from the stage to a mounting position of a supporting substrate and adherers the semiconductor chip by the control unit.

A method for connecting components involves providing an arrangement of at least two components each containing at least one metallic contact surface and a metallic sintering agent in the form of a metallic solid body having metal oxide surfaces arranged between the components and pressuring sintering the arrangement whereby metal oxide surfaces of the metallic sintering agent and the metallic contact surfaces of the components each form a joint contact surface. The pressure sintering is carried out in an atmosphere containing at least one oxidizable compound and/or the metal oxide surfaces are provided with at least one oxidizable organic compound before formation of the corresponding joint contact surface.

A three-dimensional stacked integrated circuit includes a plurality of interposers between respective integrated circuits of the three-dimensional stacked integrated circuit and below a lowermost integrated circuit, wherein a plurality of movement paths of a coolant are respectively provided in the plurality of interposers, and the plurality of movement paths of the coolant provided in the plurality of interposers are connected to each other. Alternatively, the three-dimensional stacked integrated circuit is configured by immersion and the system thereof is simplified by the coolant interacting with the outside in grooves provided to the edges of the interposers. In this case, a path for allowing the coolant to flow in the layer direction is not necessary.

There is provided a method of bonding substrates to each other, which includes: holding a first substrate on a lower surface of a first holding part; adjusting a temperature of a second substrate by a temperature adjusting part to become higher than a temperature of the first substrate; holding the second substrate on an upper surface of a second holding part; inspecting a state of the second substrate by imaging a plurality of reference points of the second substrate with a first imaging part, measuring positions of the reference points, and comparing a measurement result with a predetermined permissible range; and pressing a central portion of the first substrate with a pressing member, bringing the central portion of the first substrate into contact with a central portion of the second substrate, and sequentially bonding the first substrate and the second substrate.

The present invention relates to a bonding method for connecting a first wafer and a second wafer, wherein firstly a first adhesive layer is deposited onto a surface of the first wafer. Furthermore, a second adhesive layer is deposited onto the first adhesive layer, and the two adhesive layers are structured by way of selective removal of both adhesive layers in at least one predefined region of the first wafer, Moreover, the first wafer is connected to the second wafer by way of pressing a surface of the second wafer onto the second adhesive layer, wherein the second adhesive layer is more flowable that the first adhesive layer on connecting the first wafer to the second wafer.

The present invention relates to a bonding method for connecting a first wafer and a second wafer, wherein firstly a first adhesive layer is deposited onto a surface of the first wafer. Furthermore, a second adhesive layer is deposited onto the first adhesive layer, and the two adhesive layers are structured by way of selective removal of both adhesive layers in at least one predefined region of the first wafer, Moreover, the first wafer is connected to the second wafer by way of pressing a surface of the second wafer onto the second adhesive layer, wherein the second adhesive layer is more flowable that the first adhesive layer on connecting the first wafer to the second wafer.

A manufacturing method comprises preparing a bonding substrate having bumps thereon; preparing a mounted member having external conductive members; applying a fixing material to the surface of the bonding substrate and/or to a surface of the mounted member; and fixing the bonding substrate and the mounted member with the fixing material such that the bumps contact the external conductive members. The fixing material is prepared to contain a first compound and a second compound, each having respective viscosities which change depending on their respective temperature profiles; and applying the fixing material to the bonding substrate and/or the mounted member at a temperature lower than a first temperature, and the fixing comprises pressing the bonding substrate against the mounted member when the fixing material has a temperature lower than the first temperature; and heating the fixing material to a temperature higher than the second temperature and curing the fixed material.

In an embodiment, a method includes performing a first plasma deposition to form a buffer layer over a first side of a first integrated circuit device, the first integrated circuit device comprising a first substrate and a first interconnect structure; performing a second plasma deposition to form a first bonding layer over the buffer layer, wherein a plasma power applied during the second plasma deposition is greater than a plasma power applied during the first plasma deposition; planarizing the first bonding layer; forming a second bonding layer over a second substrate; pressing the second bonding layer onto the first bonding layer; and removing the first substrate.