In a method of manufacturing a semiconductor package, information with respect to a downward warpage of a reference package substrate, which may be bent with respect to a long axis and/or a short axis of the reference package substrate in applying heat to the reference package substrate to which a plurality of semiconductor chips may be attached using a die attach film (DAF), may be obtained. A package substrate, which may include a first surface to which the semiconductor chips may be attached using the DAF and a second surface opposite to the first surface, may be rotated with respect to the long axis or the short axis at an angle selected based on the information. The heat may be applied to the package substrate to cure the DAF and correct a warpage of the package substrate. Thus, warpage of the package substrate may be corrected for.

A method of batch soldering includes: forming a soldered joint between a metal region of a first semiconductor die and a metal region of a substrate using a solder preform via a soldering process which does not apply pressure directly to the first semiconductor die, the solder preform having a maximum thickness of 30 μm and a lower melting point than the metal regions; setting a soldering temperature of the soldering process so that the solder preform melts and fully reacts with the metal region of the first semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the preform melting point and the soldering temperature; and soldering a second semiconductor die to the same or different metal region of the substrate, without applying pressure directly to the second semiconductor die.

An embodiment related to a method for forming a device is disclosed. The method includes providing a package substrate having a first die attach pad (DAP) and a first bond pad, forming a first conductive die-substrate bonding layer on the first DAP, and attaching a first major surface of a first die to the first DAP. The first die includes a first die contact pad on a second major surface of the first die. A first conductive clip-die bonding layer with spacers is formed on the first die contact pad of the first die. A first conductive clip-substrate bonding layer is formed on the first bond pad of the package substrate. The method also includes attaching a first clip bond to the first die and the first bond pad. The first clip bond includes a first horizontal planar portion attached to the first die over the first die contact pad and a second vertical portion attached to the first bond pad.

Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300° C. or less to attach the die to the substrate. Devices produced using the methods are also described.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 μm.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 μm.

A method for producing a stable sandwich arrangement of two components with solder situated therebetween, comprising the steps: (1) providing two components, each having at least one contact surface, and a free solder preform, (2) producing a sandwich arrangement of the components and a solder preform arranged between them and thus not yet connected to them by bringing into contact (i) each one of the contact surfaces, (ii) each of the single contact surface of the components or (iii) one of the contact surfaces of one component and a single contact surface of the other component, with the contact surfaces of the free solder preform, and (3) hot-pressing the sandwich arrangement produced in step (2) so as to form the stable sandwich arrangement at a temperature being at 10 to 40% below the melting temperature of the solder metal of the solder preform, expressed in ° C.

A method for producing a stable sandwich arrangement of two components with solder situated therebetween, comprising the steps: (1) providing two components, each having at least one contact surface, and a free solder preform, (2) producing a sandwich arrangement of the components and a solder preform arranged between them and thus not yet connected to them by bringing into contact (i) each one of the contact surfaces, (ii) each of the single contact surface of the components or (iii) one of the contact surfaces of one component and a single contact surface of the other component, with the contact surfaces of the free solder preform, and (3) hot-pressing the sandwich arrangement produced in step (2) so as to form the stable sandwich arrangement at a temperature being at 10 to 40% below the melting temperature of the solder metal of the solder preform, expressed in ° C.

Provided are an underfill material capable of realizing low-pressure mounting and voidless mounting, and a method for manufacturing a semiconductor device using the same. The underfill material includes a main composition containing an acrylic polymer, an acrylic monomer, and a maleimide compound, and the acrylic polymer is contained in a range of 10 parts by mass or more and 60 parts by mass or less in 100 parts by mass of the main composition, and the maleimide compound is contained in a range of 20 parts by mass or more and 70 parts by mass or less in 100 parts by mass of the main composition. Low-pressure mounting and the voidless mounting can be realized.