Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300 C. or less to attach the die to the substrate. Devices produced using the methods are also described.

Methods for attachment and devices produced using such methods are disclosed. In certain examples, the method comprises disposing a capped nanomaterial on a substrate, disposing a die on the disposed capped nanomaterial, drying the disposed capped nanomaterial and the disposed die, and sintering the dried disposed die and the dried capped nanomaterial at a temperature of 300 C. or less to attach the die to the substrate. Devices produced using the methods are also described.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

The acrylic composition for sealing contains an acrylic compound, a polyphenylene ether resin including a radical-polymerizable substituent at a terminal, an inorganic filler, and a thermal radical polymerization initiator.

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

A semiconductor device includes an N-type semiconductor substrate comprising silicon, an N-type low-concentration impurity layer that is in contact with the upper surface of the N-type semiconductor substrate, a metal layer that is in contact with the entire lower surface of the N-type semiconductor substrate and has a thickness of at least 20 m, and first and second vertical MOS transistors formed in the low-concentration impurity layer. The ratio of the thickness of the metal layer to the thickness of a semiconductor layer containing the N-type semiconductor substrate and the low-concentration impurity layer is greater than 0.27. The semiconductor device further includes a support comprising a ceramic material and bonded to the entire lower surface of the metal layer only via a bonding layer.

A semiconductor device includes an N-type semiconductor substrate comprising silicon, an N-type low-concentration impurity layer that is in contact with the upper surface of the N-type semiconductor substrate, a metal layer that is in contact with the entire lower surface of the N-type semiconductor substrate and has a thickness of at least 20 m, and first and second vertical MOS transistors formed in the low-concentration impurity layer. The ratio of the thickness of the metal layer to the thickness of a semiconductor layer containing the N-type semiconductor substrate and the low-concentration impurity layer is greater than 0.27. The semiconductor device further includes a support comprising a ceramic material and bonded to the entire lower surface of the metal layer only via a bonding layer.

In an embodiment, a semiconductor apparatus comprises: a semiconductor chip, a substrate, and a bonding layer located between the semiconductor chip and the substrate that bonds the semiconductor chip and the substrate, wherein the bonding layer comprises sintered metal that comprises a plurality of voids, and wherein at least a portion of the plurality of voids are filled with a specific material having fluidity at a temperature higher than a preset temperature and is curable after being heated and melted.