A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

A composition for use in an electronic assembly process, the composition comprising a filler dispersed in an organic medium, wherein: the organic medium comprises a polymer; the filler comprises one or more of graphene, functionalized graphene, graphene oxide, a polyhedral oligomeric silsesquioxane, graphite, a 2D material, aluminum oxide, zinc oxide, aluminum nitride, boron nitride, silver, nano fibers, carbon fibers, diamond, carbon nanotubes, silicon dioxide and metal-coated particles, and the composition comprises from 0.001 to 40 wt. % of the filler based on the total weight of the composition.

A mounting structure is used, which includes: a semiconductor element including an element electrode; a metal member; and a sintered body configured to bond the semiconductor element and the metal member is used, in which the sintered body contains a first metal and a second metal solid-dissolved in the first metal, the second metal is a metal having a diffusion coefficient in the first metal larger than a self-diffusion coefficient of the first metal, and a content ratio of the second metal relative to a total mass of the first metal and the second metal in the sintered body is equal to or lower than a solid solution limit of the second metal to the first metal.

A semiconductor device may be provided with a first member, a second member joined to a first region of the first member via a first solder layer and a third member joined to a second region of the first member via a second solder layer. The first region and the second region are located on one side of the first member. The first solder layer contains a plurality of support particles that is constituted of a material having a higher melting point than the first solder layer. The second solder layer does not contain any support particles.

Provided is an electroconductive adhesive which is less apt to suffer cracking, chipping, etc. upon sintering and gives sintered objects having excellent mechanical strength. The electroconductive adhesive comprises metallic microparticles which include a protective layer comprising one or more amines and have an average particle diameter of 30-300 nm, the amines comprising a C.sub.5-7 monoalkylamine and/or an alkoxyamine represented by the following general formula (1). NH.sub.2R.sup.2OR.sup.1 (1) In the protective layer, the ratio of the C.sub.5-7 monoalkylamine and/or alkoxyamine represented by the general formula (1) to one or more amines different therefrom is in the range of 100:0 to 10:90. [In formula (1), R.sup.1 represents a C.sub.1-4 alkyl group and R.sup.2 represents a C.sub.1-4 alkylene group.]

Provided is an electroconductive adhesive which is less apt to suffer cracking, chipping, etc. upon sintering and gives sintered objects having excellent mechanical strength. The electroconductive adhesive comprises metallic microparticles which include a protective layer comprising one or more amines and have an average particle diameter of 30-300 nm, the amines comprising a C.sub.5-7 monoalkylamine and/or an alkoxyamine represented by the following general formula (1). NH.sub.2R.sup.2OR.sup.1 (1) In the protective layer, the ratio of the C.sub.5-7 monoalkylamine and/or alkoxyamine represented by the general formula (1) to one or more amines different therefrom is in the range of 100:0 to 10:90. [In formula (1), R.sup.1 represents a C.sub.1-4 alkyl group and R.sup.2 represents a C.sub.1-4 alkylene group.]

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

A method for manufacturing an electronic assembly features a semiconductor device with a first side and a second side opposite the first side to facilitate enhanced thermal dissipation. The first side has a first conductive pad. The second side has a primary metallic surface. By heating the assembly once, a first substrate (e.g. lead frame) is bonded to a first conductive pad via first metallic bonding layer; and second substrate (e.g., heat sinking circuit board) is bonded to a primary metallic surface via a second metallic bonding layer. In one configuration the second metallic bonding layer is composed of solder and copper, for example.

The invention relates to a method for connecting components, comprising the following steps: (1) applying a metal paste containing an organic solvent to the contact surface of a first component; (2) optionally applying the metal paste to the contact surface of a second component to be connected to the first component; (3) producing a sandwich arrangement with the two components and a layer of the metal paste in-between; (4) drying the layer of metal paste between the components; and (5) pressureless sintering of the sandwich arrangement comprising the layer of dried metal paste, the drying and the pressureless sintering being performed by irradiation with IR radiation with a peak wavelength in the wavelength range of between 750 and 1500 nm. The components can be selected from the group consisting of substrates, active components and passive components. One or both of the components can be permeable to IR radiation. Step (4) and/or step (5) can be carried out in an atmosphere containing oxygen or an oxygen-free atmosphere. In both cases, at least one of the components can have an oxidation-sensitive contact surface.

The invention relates to a method for connecting components, comprising the following steps: (1) applying a metal paste containing an organic solvent to the contact surface of a first component; (2) optionally applying the metal paste to the contact surface of a second component to be connected to the first component; (3) producing a sandwich arrangement with the two components and a layer of the metal paste in-between; (4) drying the layer of metal paste between the components; and (5) pressureless sintering of the sandwich arrangement comprising the layer of dried metal paste, the drying and the pressureless sintering being performed by irradiation with IR radiation with a peak wavelength in the wavelength range of between 750 and 1500 nm. The components can be selected from the group consisting of substrates, active components and passive components. One or both of the components can be permeable to IR radiation. Step (4) and/or step (5) can be carried out in an atmosphere containing oxygen or an oxygen-free atmosphere. In both cases, at least one of the components can have an oxidation-sensitive contact surface.