A clip, a semiconductor package, and a method are disclosed. In one example the clip includes a die attach portion having a first main face and a second main face opposite to the first main face, and at least one through-hole extending between the first and second main faces and including a curved transition from an inner wall of the at least one through-hole to the first main face.

A clip, a semiconductor package, and a method are disclosed. In one example the clip includes a die attach portion having a first main face and a second main face opposite to the first main face, and at least one through-hole extending between the first and second main faces and including a curved transition from an inner wall of the at least one through-hole to the first main face.

An embodiment related to a method for forming a device is disclosed. The method includes providing a package substrate having a first die attach pad (DAP) and a first bond pad, forming a first conductive die-substrate bonding layer on the first DAP, and attaching a first major surface of a first die to the first DAP. The first die includes a first die contact pad on a second major surface of the first die. A first conductive clip-die bonding layer with spacers is formed on the first die contact pad of the first die. A first conductive clip-substrate bonding layer is formed on the first bond pad of the package substrate. The method also includes attaching a first clip bond to the first die and the first bond pad. The first clip bond includes a first horizontal planar portion attached to the first die over the first die contact pad and a second vertical portion attached to the first bond pad.

A semiconductor device includes an insulated circuit board in which a metal layer is formed on one surface of an insulating board and a semiconductor element having a polygonal shape when viewed in a plan view that is bonded to the metal layer via a bonding material. The metal layer of the insulated circuit board has a recess that exposes the insulating board at a position corresponding to at least one corner of the semiconductor element.

Provided are an underfill material capable of realizing low-pressure mounting and voidless mounting, and a method for manufacturing a semiconductor device using the same. The underfill material includes a main composition containing an acrylic polymer, an acrylic monomer, and a maleimide compound, and the acrylic polymer is contained in a range of 10 parts by mass or more and 60 parts by mass or less in 100 parts by mass of the main composition, and the maleimide compound is contained in a range of 20 parts by mass or more and 70 parts by mass or less in 100 parts by mass of the main composition. Low-pressure mounting and the voidless mounting can be realized.

Provided are an underfill material capable of realizing low-pressure mounting and voidless mounting, and a method for manufacturing a semiconductor device using the same. The underfill material includes a main composition containing an acrylic polymer, an acrylic monomer, and a maleimide compound, and the acrylic polymer is contained in a range of 10 parts by mass or more and 60 parts by mass or less in 100 parts by mass of the main composition, and the maleimide compound is contained in a range of 20 parts by mass or more and 70 parts by mass or less in 100 parts by mass of the main composition. Low-pressure mounting and the voidless mounting can be realized.

An intelligent power module and a manufacturing method thereof are provided. The intelligent power module includes a radiator, an insulating layer, a circuit wiring, a circuit component and a metal wire. At least part of a lower surface of the radiator is defined as a heat dissipating area, the heat dissipating area is provided with a heat dissipating corrugation, the insulating layer is provided to an upper surface of the radiator, the circuit wiring is provided to the insulating layer, and the circuit component is provided to the circuit wiring and is connected to the circuit wiring via the metal wire.

Provided are: a conductive paste in which sinterability of silver particles the conductive paste can be easily controlled by using silver particles having predetermined crystal transformation characteristics defined by an XRD analysis, and after a sintering treatment, excellent electrical conductivity and thermal conductivity can be stably obtained; and a die bonding method using the conductive paste. Disclosed is a conductive paste which includes silver particles having a volume average particle size of 0.1 to 30 m as a sinterable conductive material, and a dispersing medium for making a paste-like form, and in which when the integrated intensity of the peak at 2=380.2 in the X-ray diffraction chart obtainable by an XRD analysis before a sintering treatment of the silver particles is designated as S1, and the integrated intensity of the peak at 2=380.2 in the X-ray diffraction chart obtainable by an XRD analysis after a sintering treatment (250 C., 60 minutes) of the silver particles is designated as S2, the value of S2/S1 is adjusted to a value within the range of 0.2 to 0.8.

Provided are: a conductive paste in which sinterability of silver particles the conductive paste can be easily controlled by using silver particles having predetermined crystal transformation characteristics defined by an XRD analysis, and after a sintering treatment, excellent electrical conductivity and thermal conductivity can be stably obtained; and a die bonding method using the conductive paste. Disclosed is a conductive paste which includes silver particles having a volume average particle size of 0.1 to 30 m as a sinterable conductive material, and a dispersing medium for making a paste-like form, and in which when the integrated intensity of the peak at 2=380.2 in the X-ray diffraction chart obtainable by an XRD analysis before a sintering treatment of the silver particles is designated as S1, and the integrated intensity of the peak at 2=380.2 in the X-ray diffraction chart obtainable by an XRD analysis after a sintering treatment (250 C., 60 minutes) of the silver particles is designated as S2, the value of S2/S1 is adjusted to a value within the range of 0.2 to 0.8.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.