Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

A first integrated circuit chip is assembled to a second integrated circuit chip with a back-to-back surface relationship. The back surfaces of the integrated circuit chips are attached to each other using one or more of an adhesive, solder or molecular bonding. The back surface of at least one the integrated circuit chips is processed to include at least one of a trench, a cavity or a saw cut.

A semiconductor device according to the present invention includes a mount substrate, an adhesive applied to the mount substrate, and a device having its lower surface bonded to the mount substrate with the adhesive. The surface roughness of a side surface upper portion of the device is lower than that of a side surface lower portion of the device.

A semiconductor device and method is disclosed. The semiconductor device may include a semiconductor substrate including an active area, a metal layer structure over the active area, wherein the metal layer structure is configured to form an electrical contact, the metal layer structure including a solder area, a buffer area, and a barrier area between the solder area and the buffer area, wherein, in the barrier area, the metal layer structure is further away from the active area than in the solder area and in the buffer area, and wherein each of the solder area and the buffer area is in direct contact with the active area or with a wiring layer structure arranged between the active area and the metal layer structure.

Semiconductor module including a semiconductor and including a shaped metal body that is electrically contacted by the semiconductor, for forming a contact surface for an electrical conductor, wherein the shaped metal body is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor on a semiconductor, said method including the steps of: fastening a bent or folded shaped metal body of a constant thickness to the semiconductor by means of a first fastening method and then fastening the electrical conductor to the shaped metal body by means of a second fastening method.

A semiconductor package includes a base substrate having a first semiconductor substrate, and a first protective layer covering a top side thereof. A first semiconductor chip is on the first protective layer. A first fillet layer fills a space between the first protective layer and the first semiconductor chip. A first side surface of the base substrate extends in a first direction, and second and third side surfaces extend in a second direction. The base substrate includes two corner regions and a side region between the corner regions. A first protective layer in the side region includes a first side trench which overlaps the first semiconductor chip. A part of the first fillet layer fills the first side trench.

A recording element substrate is bonded to an FPC in at least a part of a region of a second face between a liquid supply port and an edge of the recording element substrate, and an electric connection part is provided in which a wiring conductor and a pad are electrically connected to each other by a bonding wire.

The semiconductor device includes: a semiconductor element including a body portion formed in a plate shape, a protection film provided at an outer periphery on one surface of the body portion, and a metal thin film provided adjacently to an inner side of the protection film on the one surface of the body portion; a metal member joined to a surface of the metal thin film on a side opposite to the body portion, by solder; and a mold resin sealing the semiconductor element and the metal member, wherein the surface of the metal thin film on the side opposite to the body portion has, on at least a part of an outer periphery thereof, a projection portion projecting from the surface of the metal thin film, and the solder is not provided on an outer peripheral side from a top of the projection portion.

A manufacturing method of a semiconductor apparatus includes preparing an intermediate member that includes a first member having a first substrate comprising a semiconductor element formed thereon, a second member having a second substrate, the second substrate including a part of a circuit electrically connected to the semiconductor element and having a linear expansion coefficient different from that of the first substrate, and a third member having a third substrate showing such a linear expansion coefficient that a difference between itself and the linear expansion coefficient of the first substrate is smaller than a difference between the linear expansion coefficients of the first substrate and the second substrate, and includes bonding the first member and the second member together. A first bonding electrode containing copper electrically connected to the semiconductor element and a second bonding electrode containing copper electrically connected to the circuit are bonded together.

In one example, a semiconductor device, includes a substrate having a top side and a conductor on the top side of the substrate, an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect, a lid covering a top side of the electronic device, and a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole. Other examples and related methods are also disclosed herein.