Since the solder 106 temporarily remaining in the first region 301 is in a state of being high in curvature, it is in point contact with the semiconductor element 105 at the vertex of the solder 106. Thereafter, the solder 106 is gradually wetted and spread from the center part to the peripheral part and from the first region 301 to the second region 302 while the semiconductor element 105 is pressed against the solder 106. At this time, since the solder 106 wets and spreads while discharging air, generation of voids can be suppressed.

Since the solder 106 temporarily remaining in the first region 301 is in a state of being high in curvature, it is in point contact with the semiconductor element 105 at the vertex of the solder 106. Thereafter, the solder 106 is gradually wetted and spread from the center part to the peripheral part and from the first region 301 to the second region 302 while the semiconductor element 105 is pressed against the solder 106. At this time, since the solder 106 wets and spreads while discharging air, generation of voids can be suppressed.

The present disclosure is directed to a lead frame including a die pad with cavities, and methods for attaching a semiconductor die to the lead frame. The cavities allow for additional adhesive to be formed on the die pad at the corners of the semiconductor die, and prevent the additional adhesive from overflowing on to active areas of the semiconductor die.

Methods of forming a semiconductor device comprising a lead-frame having a die pad having at least one electrically conductive die pad area and an insulating layer applied onto the electrically conductive die pad area. An electrically conductive layer is applied onto the insulating layer with one or more semiconductor dice coupled, for instance adhesively, to the electrically conductive layer. The electrically conductive die pad area, the electrically conductive layer and the insulating layer sandwiched therebetween form at least one capacitor integrated in the device. The electrically conductive die pad area comprises a sculptured structure with valleys and peaks therein; the electrically conductive layer comprises electrically conductive filling material extending into the valleys in the sculptured structure of the electrically conductive die pad area.

Various embodiments of the teachings herein include an electronic module comprising: a circuit carrier with an electrically conductive thick film with a thickness of at least 0.5 millimeter; and a plurality of thermally conductive elements connected to one another by a thermally conductive material. The thermally conductive elements have a base area with rotational symmetry.

A semiconductor package includes a buffer, a chip stack mounted on the buffer, an adhesive layer disposed between the buffer and the chip stack, and a molding material surrounding the chip stack. The buffer includes a plurality of trenches disposed adjacent to a plurality of edges of the buffer. Each of the trenches is shorter than a corresponding adjacent edge of a chip area of the buffer.

The present disclosure provides a semiconductor package structure and a method of manufacturing the same. The semiconductor package structure includes a substrate, a first electronic component, an interlayer, a third electronic component and an encapsulant. The first electronic component is disposed on the substrate. The first electronic component has an upper surface and a lateral surface and a first edge between the upper surface and the lateral surface. The interlayer is on the upper surface of the first electronic component. The third electronic component is attached to the upper surface of the first electronic component via the interlayer. The encapsulant encapsulates the first electronic component and the interlayer. The interlayer does not contact the lateral surface of the first electronic component.

Multiple chip module (MCM) structures are described. In an embodiment, a module includes a first and second components on the top side of a module substrate, a stiffener structure mounted on the top side of the module substrate, and a lid mounted on the stiffener structure and covering the first component and the second component. The stiffener is joined to the lid within a trench formed in a roof of the lid.

A semiconductor device includes an insulating substrate, a wiring, a semiconductor chip and a resin layer. The wiring is provided on the insulating substrate. The wiring board includes (i) an insulating material and (ii) a pad exposed relative to the insulating material and electrically connected to the wiring. A height of the insulating material in a vertical direction of the wiring board varies along the wiring board. The semiconductor chip includes a bump connected to the pad on a first surface of the semiconductor chip. The resin layer covers a periphery of the bump between the wiring board and the semiconductor chip.

This application discloses a chip packaging module and an electronic device. The disclosed chip packaging module includes a bearing plate, a die, conductive adhesive, a connection reinforcing part, and a packaging layer, where the die is electrically connected to the bearing plate through the conductive adhesive, the connection reinforcing part is connected to the bearing plate, at least part of the connection reinforcing part is disposed in the conductive adhesive, and the packaging layer is disposed on the bearing plate, and covers the die, the conductive adhesive, and the connection reinforcing part.