An integrated circuit (IC) package includes a first die with a first surface overlaying a substrate. The first die includes a first metal pad at a second surface opposing the first surface. The IC package also includes a dielectric layer having a first surface contacting the second surface of the first die. The IC package further includes a second die with a surface that contacts a second surface of the dielectric layer. The second die includes a second metal pad aligned with the first metal pad of the first die. A plane perpendicular to the second surface of the first die intersects the first metal pad and the second metal pad.

An integrated circuit (IC) package includes a first die with a first surface overlaying a substrate. The first die includes a first metal pad at a second surface opposing the first surface. The IC package also includes a dielectric layer having a first surface contacting the second surface of the first die. The IC package further includes a second die with a surface that contacts a second surface of the dielectric layer. The second die includes a second metal pad aligned with the first metal pad of the first die. A plane perpendicular to the second surface of the first die intersects the first metal pad and the second metal pad.

Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive element and an antenna element over the semiconductor die. The chip package also includes a first conductive feature electrically connecting the conductive element of the semiconductor die and the antenna element. The chip package further includes a protective layer surrounding the first conductive feature. In addition, the chip package includes a second conductive feature over the first conductive feature. A portion of the second conductive feature is between the first conductive feature and the protective layer.

Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive element and an antenna element over the semiconductor die. The chip package also includes a first conductive feature electrically connecting the conductive element of the semiconductor die and the antenna element. The chip package further includes a protective layer surrounding the first conductive feature. In addition, the chip package includes a second conductive feature over the first conductive feature. A portion of the second conductive feature is between the first conductive feature and the protective layer.

A semiconductor package includes a supporting wiring structure including a first redistribution dielectric layer and a first redistribution conductive structure; a frame on the supporting wiring structure, having a mounting space and a through hole, and including a conductive material; a semiconductor chip in the mounting space and electrically connected to the first redistribution conductive structure; a cover wiring structure on the frame and the semiconductor chip and including a second redistribution dielectric layer and a second redistribution conductive structure; an antenna structure on the cover wiring structure; a connection structure extending in the through hole and electrically connecting the first redistribution conductive structure to the second redistribution conductive structure; and a dielectric filling member between the connection structure in the through hole and the frame and surrounding the semiconductor chip, the frame, and the connection structure.

A semiconductor package includes a supporting wiring structure including a first redistribution dielectric layer and a first redistribution conductive structure; a frame on the supporting wiring structure, having a mounting space and a through hole, and including a conductive material; a semiconductor chip in the mounting space and electrically connected to the first redistribution conductive structure; a cover wiring structure on the frame and the semiconductor chip and including a second redistribution dielectric layer and a second redistribution conductive structure; an antenna structure on the cover wiring structure; a connection structure extending in the through hole and electrically connecting the first redistribution conductive structure to the second redistribution conductive structure; and a dielectric filling member between the connection structure in the through hole and the frame and surrounding the semiconductor chip, the frame, and the connection structure.

A semiconductor device includes a first semiconductor chip having a first surface and a second surface; a first adhesive layer on the first surface; a second semiconductor chip that includes a third surface and a fourth surface, and a connection bump on the third surface. The connection bump is coupled to the first adhesive layer. The semiconductor device includes a wiring substrate connected to the connection bump. The semiconductor device includes a first resin layer covering the connection bump between the second semiconductor chip and the wiring substrate, and covers one side surface of the second semiconductor chip connecting the third surface and the fourth surface. The first adhesive layer covers an upper portion of the at least one side surface. The first resin layer covers a lower portion of the t least one side surface. The first adhesive layer and the first resin layer contact each other.

A semiconductor device having an integrated antenna is provided. The semiconductor device includes a base die having an integrated circuit formed at an active surface and a cap die bonded to the backside surface of the base die. A metal trace is formed over a top surface of the cap die. A cavity is formed under the metal trace. A conductive via is formed through the base die and the cap die interconnecting the metal trace and a conductive trace of the integrated circuit.

A semiconductor device having an integrated antenna is provided. The semiconductor device includes a base die having an integrated circuit formed at an active surface and a cap die bonded to the backside surface of the base die. A metal trace is formed over a top surface of the cap die. A cavity is formed under the metal trace. A conductive via is formed through the base die and the cap die interconnecting the metal trace and a conductive trace of the integrated circuit.

A semiconductor assembly includes a first die and a second die. The semiconductor assembly also includes a film on die (FOD) layer configured to attach the first die to the second die. The FOD layer is disposed on a first surface of the first die. The FOD layer includes a first portion comprising a first die attach film (DAF) disposed on an inner region of the first surface. The FOD layer also includes a second portion that includes a second DAF disposed on a peripheral region of the first surface surrounding the inner region. The second DAF includes a different material than the first DAF.