An electronic component includes a first set comprising an interconnect layer and an electronic circuit having a front face and a back face, which is connected to the interconnect layer by the front face, wherein the first set comprises a metal plate having a front face and a back face joined to the back face of the electronic circuit; a coupling agent between the front face of the metal plate and the back face of the electronic circuit, configured to thermally and electrically connect the metal plate to the electronic circuit; and in that the electronic component comprises: one or more layers made of organic materials stacked around the first set and the metal plate using a printed circuit-type technique and encapsulating the electronic circuit; a thermally conductive metal surface arranged at least partially in contact with the back face of the metal plate.

A low temperature rapid curing type low elastic conductive adhesive is provided which is useful as a conductive adhesive for component mounting in a field of FHE. The conductive resin composition contains (A) at least two types of urethane acrylate oligomers, (B) a radical polymerizable monomer, (C) a free radical generation curing agent, and (D) conductive particle. In the conductive resin composition, the component (A) preferably contains a high molecular weight urethane acrylate oligomer having a weight average molecular weight of 10,000 or more (A1), and a low molecular weight urethane acrylate oligomer having a weight average molecular weight of 9,999 or less (A2).

A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.

A semiconductor device includes a semiconductor element, a joint material, a heat spreader, and a sealing resin. The semiconductor element includes a main surface. The main surface has a first outer periphery. The sealing resin seals the semiconductor element, the joint material, and the heat spreader. The heat spreader includes a main body and a protrusion. The protrusion is joined to the main surface by the joint material. The main surface has an exposed surface. The exposed surface is located between the first outer periphery and the joint material. The first outer periphery and the exposed surface are exposed from the joint material. The first outer periphery and the exposed surface are sealed with the sealing resin.

An electronic device includes a die attach pad with a set of cantilevered first leads for down bond connections, a set of second leads spaced apart from the die attach pad, a semiconductor die mounted to the die attach pad and enclosed by a package structure, a set of first bond wires connected between respective bond pads of the semiconductor die and at least some of the first leads, and a set of second bond wires connected between respective further bond pads of the semiconductor die and at least some of the second leads.

A semiconductor package including a semiconductor chip, a redistribution layer structure disposed under the semiconductor chip, a bump pad disposed under the redistribution layer structure and having an upper structure of a first width and a lower structure of a second width less than the first width, a metal seed layer disposed along a lower surface of the upper structure and a side surface of the lower structure, an insulating layer surrounding the redistribution layer structure and the bump pad, and a bump structure disposed under the bump pad. A first undercut is disposed at one end of the metal seed layer that contacts the upper structure, and a second undercut is disposed at an other end of the metal seed layer that contacts the lower structure.

An intelligent power module includes: an encapsulating material structure; a lead frame which is at least partially encapsulated inside the encapsulating material structure, wherein all portions of the lead frame encapsulated inside the encapsulating material structure are at a same planar level; and a heat dissipation structure, which is connected to the lead frame.

A packaged electronic module for downhole applications, in particular in a petrochemical well or similar environment. The electronic module includes one or more electronic components located on each side of a substrate, where the one or more electronic components are attached to the substrate by means of glue.

A method for forming a semiconductor structure includes following operations. A first substrate including a first side, a second side opposite to the first side, and a metallic pad disposed over the first side is received. A dielectric structure including a first trench directly above the metallic pad is formed. A second trench is formed in the dielectric structure and a portion of the first substrate. A sacrificial layer is formed to fill the first trench and the second trench. A third trench is formed directly above the metallic pad. A barrier ring and a bonding structure are formed in the third trench. A bonding layer is disposed to bond the first substrate to a second substrate. A portion of the second side of the first substrate is removed to expose the sacrificial layer. The sacrificial layer is removed by an etchant.

Semiconductor light emitting device includes: substrate including main and back surfaces, first and second side surfaces, and bottom and top surfaces, wherein main surface includes first to fourth sides; first main surface electrode on main surface and including first base portion contacting the sides of the main surface, and die pad connected to first base portion; second main surface electrode disposed on the main surface and including second base portion contacting first and third sides of the main surface, and wire pad connected to second base portion; semiconductor light emitting element including first electrode pad and mounted on die pad; wire connecting first electrode pad and wire pad; first insulating film covering portion between first base portion and die pad; second insulating film covering portion between second base portion and wire pad and having end portions contacting main surface; and light-transmitting sealing resin.