A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.

A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.

A three-dimensional stacking technique performed in a wafer-to-wafer fashion reducing the machine movement in production. The Wafers are processed with metallic traces and stacked before dicing into separate die stacks. The traces of each layer of the stacks are interconnected via electroless plating.

A packaged semiconductor device includes a leadframe (LF) having a plurality of laminate-supporting pedestals. A cured first die attach (DA) material is on an outer edge of the pedestals being an ultraviolet (UV)-curing DA material having a photoinitiator or a cured B-stage DA material. A cured thermally-curing DA material is on an area of the pedestals not occupied by the UV-curing DA material. A laminate component having bond pads on a top side is mounted top side up on the plurality of pedestals.

A packaged semiconductor device includes a leadframe (LF) having a plurality of laminate-supporting pedestals. A cured first die attach (DA) material is on an outer edge of the pedestals being an ultraviolet (UV)-curing DA material having a photoinitiator or a cured B-stage DA material. A cured thermally-curing DA material is on an area of the pedestals not occupied by the UV-curing DA material. A laminate component having bond pads on a top side is mounted top side up on the plurality of pedestals.

A three-dimensional stacking technique performed in a wafer-to-wafer fashion reducing the machine movement in production. The Wafers are processed with metallic traces and stacked before dicing into separate die stacks. The traces of each layer of the stacks are interconnected via electroless plating.

A manufacturing method of a semiconductor device according to the present embodiment includes forming a modified layer with distortion in semiconductor crystals in a first and a second semiconductor wafers by radiating laser to a dicing region of the first and second semiconductor wafers, each of the first and second semiconductor wafers including a plurality of semiconductor chips. The method also includes stacking the second semiconductor wafer on the first semiconductor wafer to be shifted in a first direction. The first direction is a direction from a first side of a first semiconductor chip of the first semiconductor wafer towards an opposite side to the first side of the first semiconductor chip. The method further includes cleaving the first and second semiconductor wafers.

A manufacturing method of a semiconductor device according to the present embodiment includes forming a modified layer with distortion in semiconductor crystals in a first and a second semiconductor wafers by radiating laser to a dicing region of the first and second semiconductor wafers, each of the first and second semiconductor wafers including a plurality of semiconductor chips. The method also includes stacking the second semiconductor wafer on the first semiconductor wafer to be shifted in a first direction. The first direction is a direction from a first side of a first semiconductor chip of the first semiconductor wafer towards an opposite side to the first side of the first semiconductor chip. The method further includes cleaving the first and second semiconductor wafers.

A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.

A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.