Disclosed is a method for bonding with a silver paste, the method including: coating a silver paste on a semiconductor device or a substrate, the silver paste containing silver and indium; disposing the semiconductor on the substrate; and heating the silver paste to form a bonding layer, wherein the semiconductor device and the substrate are bonded to each other through the bonding layer, and wherein the indium is contained in the silver paste at 40 mole % or less.

An electronic device can include a plurality of pad electrodes provided at at least one side of a substrate, at least one circuit film configured to have a plurality of connection electrodes provided at an insulating film to correspond to the plurality of pad electrodes, a plurality of solders to conductively connect the plurality of connection electrodes to the plurality of pad electrodes exposed from the circuit film one-to-one, and an insulating adhesive to fill spaces between the plurality of pad electrodes and the plurality of connection electrodes. Also, each of the plurality of solders has an edge horizontally protruding from the insulating film.