H01L2224/8391

LOW STRESS ASYMMETRIC DUAL SIDE MODULE

Implementations of semiconductor packages may include: a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include two or more spacers coupled to the first side of the first substrate and a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the two or more spacers.

MICROELECTRONIC PACKAGE WITH UNDERFILLED SEALANT

Embodiments may relate to a microelectronic package comprising an integrated heat spreader (IHS) coupled with a package substrate. A sealant may be positioned between, and physically coupled to, the IHS and the package substrate. The sealant may at least partially extend from a footprint of the IHS. Other embodiments may be described or claimed.

MICROELECTRONIC PACKAGE WITH UNDERFILLED SEALANT

Embodiments may relate to a microelectronic package comprising an integrated heat spreader (IHS) coupled with a package substrate. A sealant may be positioned between, and physically coupled to, the IHS and the package substrate. The sealant may at least partially extend from a footprint of the IHS. Other embodiments may be described or claimed.

PHYSICAL QUANTITY SENSOR AND SEMICONDUCTOR DEVICE
20200407216 · 2020-12-31 ·

A device includes: a chip; a support member; an adhesive layer disposed on the support member; and a wire electrically connected to the sensor chip on a side face of the sensor chip. Herein the adhesive layer includes a material exhibiting a dilatancy property in which a shear stress increases in a multi-dimensional function as a shear rate increases.

Method of manufacturing semiconductor device and semiconductor device

An improvement is achieved in the performance of a semiconductor device. A second component mounting portion over which a first electronic component is mounted is connected to a coupling portion of a lead frame via a suspension lead. The suspension lead has a first portion between the second component mounting portion and the coupling portion and a second portion between the first portion and the coupling portion. The second portion has a third portion connected to the first portion and having a width smaller than a width of the first portion, a fourth portion connected to the first portion and having a width smaller than the width of the first portion, and a through hole (opening) located between the third and fourth portions. Each of the first, third, and fourth portions has the same thickness. After a sealing body is formed, a cutting jig is pressed against the suspension lead to cut the suspension lead.

Arrangement and Method for Joining at Least Two Joining Partners
20200294956 · 2020-09-17 ·

An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted to the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a substance-to-substance bond between the joining members.

Arrangement and Method for Joining at Least Two Joining Partners
20200294956 · 2020-09-17 ·

An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted to the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a substance-to-substance bond between the joining members.

BONDING APPARATUS AND METHOD
20200168581 · 2020-05-28 ·

A bonding apparatus and method includes: a stage configured to fix a first electric component; a pressing unit configured to press a conductive adhesive film and a second electric component onto the first electric component; a driver configured to control movement of the pressing unit along a direction; and a plurality of sensors at different positions on the stage and configured to sense a change in capacitance with the pressing unit, wherein the pressing unit includes a flat metal material in first regions facing the plurality of sensors.

Method for fabricating stack die package
10546840 · 2020-01-28 · ·

In one embodiment, a method can include coupling a gate and a source of a first die to a lead frame. The first die can include the gate and the source that are located on a first surface of the first die and a drain that is located on a second surface of the first die that is opposite the first surface. In addition, the method can include coupling a source of a second die to the drain of the first die. The second die can include a gate and the source that are located on a first surface of the second die and a drain that is located on a second surface of the second die that is opposite the first surface.

Power semiconductor module and method for manufacturing the same

A power semiconductor module includes: a substrate including first, second, and third metal patterns separated from each other, a semiconductor element located on the substrate, a lead frame located on the substrate and including first, second, third, and fourth bodies; a first terminal connected to the first body, a second terminal connected to the second body, and a third common terminal that connects the third body and the fourth body, wherein a length of the third common terminal is longer than that of the first and second terminals.