The present disclosure provides a semiconductor structure including a first chip having a first dielectric surface, a second chip having a second dielectric surface facing the first dielectric surface and maintaining a distance thereto, and an air gap between the second dielectric surface and the first dielectric surface. The first chip includes a plurality of first conductive lines in proximity to the first dielectric surface and parallel to each other, two adjacent first conductive lines each having a sidewall partially exposed from the first dielectric surface. The present disclosure further provides a method for manufacturing the semiconductor structure described herein.

A three-dimensional (3D) integrated circuit (IC) includes a first IC die and a second IC die. The first IC die includes a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The second IC die includes a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

A method includes applying a die attach material to a die pad of an integrated circuit. The die attach material is employed as a bonding material to the die pad. The method includes mounting an integrated circuit die to the die pad of the integrated circuit via the die attach material. The method includes printing an adhesion deposition material on the die attach material appearing at the interface of the integrated circuit die and the die pad of the integrated circuit to mitigate delamination between the integrated circuit die and the die pad.

The present disclosure provides a semiconductor structure including a first chip having a first dielectric surface, a second chip having a second dielectric surface facing the first dielectric surface and maintaining a distance thereto, and an air gap between the second dielectric surface and the first dielectric surface. The first chip includes a plurality of first conductive lines in proximity to the first dielectric surface and parallel to each other, two adjacent first conductive lines each having a sidewall partially exposed from the first dielectric surface. The present disclosure further provides a method for manufacturing the semiconductor structure described herein.

A semiconductor package including an organic interposer includes: first and second semiconductor chips each having active surfaces having connection pads disposed thereon; the organic interposer disposed on the active surfaces of the first and second semiconductor chips and including a wiring layer electrically connected to the connection pads; barrier layers disposed onside surfaces of the first and second semiconductor chips; and an encapsulant encapsulating at least portions of the first and second semiconductor chips.

A method for integrating heterogeneous elements with elements residing on a target wafer is described. A source die including a compound semiconductor substrate, an etch stop layer and at least one active semiconductor element is provided. The etch stop layer is between the active semiconductor element(s) and the substrate. The etch stop layer is resistant to a plasma etch for the substrate. A bonding agent is provided on a surface of the target wafer. The source die is aligned to and placed on the part of the surface of the target wafer such that the active semiconductor element(s) are between the target wafer's surface and the substrate. The bonding agent is between the source die and the surface of the target wafer. The source die is bonded to the target wafer using the bonding agent. The substrate of the source die is removed, the removal includes performing the plasma etch.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.

A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.