A semiconductor structure having a silver-indium transient liquid phase bonding joint is provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.

The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200° C. and in some embodiments at about 150° C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.

A method for manufacturing a handle substrate, the method including the steps of: a) providing a support substrate comprising a receiving face, b) forming a film by depositing an anti-adherent formulation including a first solvent over the receiving face of the support substrate, c) depositing a liquid formulation over a face of the film, before the complete evaporation of the first solvent, the liquid formulation being intended to form an adhesive layer, and has a γ.sub.l(liquid) surface energy, and d) evaporating the first solvent so as to obtain anti-adherent film from the film in order to obtain the handle substrate, the anti-adherent film allowing obtaining a bonding energy with the adhesive layer that is low enough: <1.2 J/m.sup.2 or advantageously <0.4 J/m.sup.2.

The present invention relates to a method of forming a joint bonding together two solid objects and joints made by the method, where the joint is formed by a layer of a binary system which upon heat treatment forms a porous, coherent and continuous single solid-solution phase extending across a bonding layer of the joint.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 μm.

The present invention includes: a heat plate for heating a lower side of a substrate sliding on an upper surface; and a heat block for heating the heat plate. The heat block includes an air heating flow path for heating air which flows in from a bottom surface side and causing the air to flow out to the heat plate side, the heat plate includes air holes for discharging the air heated by the air heating flow path from the upper surface, the heated air discharged from the air holes forms a heated air atmosphere above the heat plate, and the substrate is transported through the heat air atmosphere. Thereby, curved deformation of the substrate is suppressed.

Devices and techniques include process steps for preparing various microelectronic components for bonding, such as for direct bonding without adhesive. The processes include providing a first bonding surface on a first surface of the microelectronic components, bonding a handle to the prepared first bonding surface, and processing a second surface of the microelectronic components while the microelectronic components are gripped at the handle. In some embodiments, the processes include removing the handle from the first bonding surface, and directly bonding the microelectronic components at the first bonding surface to other microelectronic components.

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 μm.

The present invention provides a highly reliable solder joint, the solder joint including a solder joint layer having a melted solder material containing Sn as a main component and further containing Ag and/or Sb and/or Cu; and a joined body including a Ni—P—Cu plating layer on a surface in contact with the solder joint layer, wherein the Ni—P—Cu plating layer contains Ni as a main component and contains 0.5% by mass or greater and 8% by mass or less of Cu and 3% by mass or greater and 10% by mass or less of P, the Ni—P—Cu plating layer has a microcrystalline layer at an interface with the solder joint layer, and the microcrystalline layer includes a phase containing microcrystals of a NiCuP ternary alloy, a phase containing microcrystals of (Ni,Cu).sub.3P, and a phase containing microcrystals of Ni.sub.3P.