Patent classifications
H01L2224/83951
SEMICONDUCTOR PACKAGES AND MANUFACTURING METHOD OF THE SAME
A semiconductor package includes a first substrate and a first semiconductor device. The first semiconductor device is bonded to the first substrate and includes a second substrate, a plurality of first dies and a second die. The first dies are disposed between the first substrate and the second substrate. The second die is surrounded by the first dies. A cavity is formed among the first dies, the first substrate and the second substrate, and a gap is formed between the second die and the first substrate.
Semiconductor package for high-speed data transmission and manufacturing method thereof
A semiconductor structure includes: a substrate; a first dielectric layer over the substrate; a waveguide over the first dielectric layer; a second dielectric layer over the first dielectric layer and laterally surrounding the waveguide; a first conductive member and a second conductive member over the second dielectric layer and the waveguide, the first conductive member and the second conductive member being in contact with the waveguide; a conductive bump on one side of the substrate and electrically connected to the first conductive member or the second conductive member; and a conductive via extending through the substrate and electrically connecting the conductive bump to the first conductive member or the second conductive member. The waveguide is configured to transmit an electromagnetic signal between the first conductive member and the second conductive member.
IMAGE SENSOR INCLUDING A BACK VIA STACK
An image sensor includes a first structure including a first substrate, and a first internal wiring structure on the first substrate. The first substrate includes an active pixel region and a through electrode region around the active pixel region. The first internal wiring structure includes a plurality of first internal wiring patterns. The image sensor further includes a second structure including a second substrate and a second internal wiring structure on the second substrate. The second substrate is arranged on the first substrate. The image sensor additionally includes a through electrode layer arranged in the through electrode region to at least partially fill a through electrode trench, which penetrates the first substrate, and to connect the first internal wiring structure to the second internal wiring structure.
Circuit Carrier Having an Installation Place for Electronic Components, Electronic Circuit and Production Method
Various embodiments include a circuit carrier comprising: an installation place for an electronic component; and a deposit of a joining adjuvant applied to the installation place. The installation place has at an edge, a recess forming a depression in a surface of the circuit carrier. The deposit comprises a sintered material with a protuberance at an edge of the deposit.
SEMICONDUCTOR DEVICE WITH A HETEROGENEOUS SOLDER JOINT AND METHOD FOR FABRICATING THE SAME
A method for fabricating a semiconductor device with a heterogeneous solder joint includes: providing a semiconductor die; providing a coupled element; and soldering the semiconductor die to the coupled element with a first solder joint. The first solder joint includes: a solder material including a first metal composition; and a coating including a second metal composition, different from the first metal composition, the coating at least partially covering the solder material. The second metal composition has a greater stiffness and/or a higher melting point than the first metal composition.
Camera assembly and packaging method thereof, lens module, electronic device
The present disclosure provides a camera assembly and a packaging method thereof, a lens module, and an electronic device. The packaging method of the camera assembly includes: providing a carrier substrate and forming a redistribution layer (RDL) structure on the carrier substrate; providing functional components having solder pads; forming a photosensitive unit, including a photosensitive chip and an optical filter mounted on the photosensitive chip, that the photosensitive chip has solder pads facing the optical filter; temporarily bonding the optical filter of the photosensitive unit with the carrier substrate, and placing the functional components on the RDL structure, that each of the solder pads of the photosensitive chip and the solder pads of the functional components faces the RDL structure and electrically connects with the RDL structure; forming an encapsulation layer covering the carrier substrate, that the encapsulation layer is coplanar with a highest top of the photosensitive chip and the functional components; and removing the carrier substrate.
Package and semiconductor device
A package comprising a base is provided. An electrode and a concave portion are arranged on a first surface of the package. The base comprises a second surface on a side opposite to the first surface and a third surface. The first surface is positioned between the second and third surfaces. The electrode comprises an electrode upper surface and an electrode side surface. The concave portion comprises a concave side surface and a bottom surface positioned closer to the second surface than the concave side surface. The electrode upper surface is arranged at a position further away from the virtual plane than the bottom surface. The electrode side surface is continuous with the concave side surface. The concave portion further comprises a second side surface which faces the concave side surface and is continuous with the third surface.
Semiconductor device
The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.
BONDING OF BRIDGE TO MULTIPLE SEMICONDUCTOR CHIPS
Interconnecting a first chip and a second chip includes mounting the first and second chips to a chip handler having an opening and at least one support surface. Each of the first chip and the second chip has a first surface including a first set of terminals and a second surface opposite to the first surface. The first surface of the first chip and the first surface of the second chip mounted to the chip handler are supported by the at least one support surface of the chip handler. The first and second chips are placed on a chip support member with the chip handler from the second surfaces. A bridge member is inserted by a bridge handler through the opening of the chip handler to place the bridge member onto the first sets of terminals of the first and second chips that are exposed from the opening.
ANISOTROPIC CONDUCTIVE FILM AND DISPLAY DEVICE INCLUDING SAME
The disclosure relates to a display device and an anisotropic conductive film. An anisotropic conductive film disposed between a display panel and a printed circuit board, the anisotropic conductive film including a base resin, a plurality of first conductive balls dispersed in the base resin, each of the plurality of first conductive balls including a core made of a polymer material and at least one metal layer surrounding the core, and a plurality of second conductive balls dispersed in the base resin, each of the plurality of second conductive balls being made of a meltable material, and the anisotropic conductive film having a first area in which the anisotropic conductive film overlaps the first pad electrode and the first lead electrode in a thickness direction of the display device, and a second area as an area disposed between the first lead electrode and the second lead electrode. Each of the metal layer of the first conductive ball and a surface of the second conductive ball are in contact with both the first pad electrode and the first lead electrode.