A camera assembly includes a photosensitive unit, including a photosensitive chip and an optical filter mounted on the photosensitive chip; functional components; and an encapsulation layer, embedded with the photosensitive unit and the functional components. The photosensitive chip and the functional components are exposed from a bottom surface of the encapsulation layer. A top surface of the encapsulation layer is higher than the photosensitive chip and functional components and exposes the optical filter. The photosensitive chip has soldering pads facing away from the bottom surface of the encapsulation layer. The functional components have soldering pads exposed from the bottom surface of the encapsulation layer. The camera assembly further includes a redistribution layer structure, disposed on the bottom surface of the encapsulation layer and electrically connecting to the soldering pads.

A camera assembly includes a photosensitive unit, including a photosensitive chip and an optical filter mounted on the photosensitive chip; functional components; and an encapsulation layer, embedded with the photosensitive unit and the functional components. The photosensitive chip and the functional components are exposed from a bottom surface of the encapsulation layer. A top surface of the encapsulation layer is higher than the photosensitive chip and functional components and exposes the optical filter. The photosensitive chip has soldering pads facing away from the bottom surface of the encapsulation layer. The functional components have soldering pads exposed from the bottom surface of the encapsulation layer. The camera assembly further includes a redistribution layer structure, disposed on the bottom surface of the encapsulation layer and electrically connecting to the soldering pads.

Direct bonding heterogeneous integration packaging structures and processes include a packaging substrate with first and second opposing surfaces. A trench or a pedestal is provided in the first surface. A bridge is disposed in the trench or is adjacent the pedestal sidewall, wherein the bridge includes an upper surface coplanar with the first surface of the package substrate. At least two chips in a side by side proximal arrangement overly the bridge and the packaging substrate, wherein the bridge underlies peripheral edges of the at least two chips in the side by side proximal arrangement. The at least two chips include a plurality of electric connections that are directly coupled to corresponding electrical connections on the bridge and on the packaging substrate.

Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.

A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

A semiconductor chip (2) includes a surface electrode (3). A conductive bonding member (8) includes first and second bonding members (8a,8b) provided on the surface electrode (3). A lead electrode (9) is bonded to a part of the surface electrode (3) via the first bonding member (8a) and has no contact with the second bonding member (8b). A signal wire (11) is bonded to the surface electrode (3). The second bonding member (8b) is arranged between the first bonding member (8a) and the signal wire (11). A thickness of the first bonding member (8a) is larger than a thickness of the second bonding member (8b).

A semiconductor element bonding structure capable of strongly bonding a semiconductor element and an object to be bonded and relaxing thermal stress caused by a difference in thermal expansion, by interposing metal particles and Ni between the semiconductor element and the object to be bonded, the metal particles having a lower hardness than Ni and having a micro-sized particle diameter. A plurality of metal particles 5 (aluminum (Al), for example) having a lower hardness than nickel (Ni) and having a micro-sized particle diameter are interposed between a semiconductor chip 3 and a substrate 2 to be bonded to the semiconductor chip 3, and the metal particles 5 are fixedly bonded by the nickel (Ni). Optionally, aluminum (Al) or an aluminum alloy (Al alloy) is used as the metal particles 5, and aluminum (Al) or an aluminum alloy (Al alloy) is used on the surface of the semiconductor chip 3 and/or the surface of the substrate 2.

The present disclosure provides a method for packaging a camera assembly. The method includes: providing a photosensitive chip; mounting an optical filter on the photosensitive chip; temporarily bonding the photosensitive chip and functional components on a carrier substrate, where the photosensitive chip has soldering pads facing away from the carrier substrate and the functional components have soldering pads facing toward the carrier substrate; forming an encapsulation layer covering the carrier substrate, the photosensitive chip, and the functional components, and exposing the optical filter; after the encapsulation layer is formed, removing the carrier substrate; and after the carrier substrate is removed, forming a redistribution layer structure on a side of the encapsulation layer facing away from the optical filter to electrically connect the soldering pads of the photosensitive chip with the soldering pads of the functional components.

The present disclosure provides a method for packaging a camera assembly. The method includes: providing a photosensitive chip; mounting an optical filter on the photosensitive chip; temporarily bonding the photosensitive chip and functional components on a carrier substrate, where the photosensitive chip has soldering pads facing away from the carrier substrate and the functional components have soldering pads facing toward the carrier substrate; forming an encapsulation layer covering the carrier substrate, the photosensitive chip, and the functional components, and exposing the optical filter; after the encapsulation layer is formed, removing the carrier substrate; and after the carrier substrate is removed, forming a redistribution layer structure on a side of the encapsulation layer facing away from the optical filter to electrically connect the soldering pads of the photosensitive chip with the soldering pads of the functional components.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.