A die-packaging component includes a substrate, a die, a jumper structure, a lead structure and a package body. The substrate has a base surface further including a die-connecting portion and a package-body retaining structure surrounding the die-connecting portion. The die connects the die-connecting portion. The jumper structure welded to the die generates a thermal deformation while in conducting a high-voltage current. The lead structure includes a lead groove defining a thermal-deformation tolerance allowable route. While in meeting the thermal deformation, the jumper structure welded to the lead groove as well is movable along the thermal-deformation tolerance allowable route. The package body at least partly covers the lead structure and the substrate, completely covers the die and the jumper structure, and is constrained by the package-body retaining structure.

Implementations of a clip for a semiconductor package may include: an electrically conductive clip having a first end and a second end and a middle section between the first end and the second end. The first end may be configured to couple to a first die through a bonding material. The second end may be configured to couple to a second die through a bonding material. The middle section may be configured to couple to an emitter structure through a bonding material. The clip may include an integrally formed electrically conductive material and include an M-shape. A middle of the M-shape may be coupled to the emitter structure.

An object of the invention is to provide: a manufacturing method for a highly reliable power semiconductor device which prevents breakage of an conductor pattern and an insulating layer, and has bonding strength higher than that by the conventional bonding between the electrode terminal and the conductor pattern; and that power semiconductor device. Breakage of the conductor pattern and the insulating layer is prevented due to inclusion of: a step of laying an electrode terminal on a protrusion provided on a conductor pattern placed on a circuit-face side of a ceramic board so that a center portion of a surface to be bonded of the electrode terminal makes contact with a head portion of the protrusion; a step of pressurizing and ultrasonically vibrating a surface opposite to the surface to be bonded, of the electrode terminal, using an ultrasonic horn, to thereby bond the electrode terminal to the conductor pattern.

In one embodiment, methods for making semiconductor devices are disclosed.

A semiconductor module can be realized, which is formed by mounting an electronic component and a bus bar by solder on a lead frame including a plurality of terminals, wherein a solder flow suppressing section capable of restricting a direction of flow of solder on the lead frame is formed in the vicinity of the solder portion of the component mounted by solder, and by this configuration, positional deviation, such as rotation or movement of the mounted component, is suppressed and the size of the module can be made compact.

An electronic device includes first to third terminals and a clip. The clip includes first to third joint portions and a connection portion. The first to third joint portions correspond to and are bonded to the first to third terminals, respectively. The connection portion connects the first to third joint portions. One terminal in the first to third terminals has a depressed portion depressed to one side in a predetermined direction to store a conductive bonding material. A variation in positions of the first to third terminals in the predetermined direction is absorbed by deformation of the conductive bonding material when one joint portion in the first to third joint portions corresponding to the one terminal is bonded to the one terminal through the conductive bonding material.

A clip for a semiconductor package. Implementations may include: an electrically conductive clip having a first end and a second end and a middle section between the first end and the second end. The first end may be configured to couple to a first die through a bonding material. The second end may be configured to couple to a second die through a bonding material. The middle section may be configured to couple to an emitter structure through a bonding material. The clip may include an integrally formed electrically conductive material and include an M-shape. A middle of the M-shape may be coupled to the emitter structure.

An electronic component includes a leadframe and a first semiconductor die. The leadframe includes a leadframe top side, a leadframe bottom side opposite the leadframe top side, and a top notch at the leadframe top side. The top notch includes a top notch base located between the leadframe top side and the leadframe bottom side, and defining a notch length of the top notch, and can also include a top notch first sidewall extended, along the notch length, from the leadframe top side to the top notch base. The first semiconductor die can include a die top side a die bottom side opposite the die top side and mounted onto the leadframe top side, and a die perimeter. The top notch can be located outside the die perimeter. Other examples and related methods are also disclosed.

A clip-bonded semiconductor chip package comprises a lead frame having a pad and a lead; a semiconductor chip bonded onto the pad of the lead frame; a bonding pad on the semiconductor chip; metal bumps formed on the bonding pad; a clip having first and second portions coupled to each other wherein the first portion is bonded to the bonding pad via the metal bumps, wherein the second portion is bonded to the lead of the lead frame; and a package body made of a molding material around the lead frame, the semiconductor chip and the clip.

In one embodiment, methods for making semiconductor devices are disclosed.