An embodiment related to a stacked package is disclosed. The stacked package includes a conductive gang with gang legs electrically coupling a second component stacked over a first die to a package substrate. The first die is mounted over a die attach region of the package substrate and electrically coupled to the package substrate.

An embodiment related to a stacked package is disclosed. The stacked package includes a conductive gang with gang legs electrically coupling a second component stacked over a first die to a package substrate. The first die is mounted over a die attach region of the package substrate and electrically coupled to the package substrate.

This member connection method includes a printing step. In the printing step, a coating film-formed region in which the coating film is formed, and a coating film non-formed region in which the coating film is not formed are formed in the print pattern, and the coating film-formed region is divided into a plurality of concentric regions and a plurality of radial regions by means of a plurality of line-shaped regions provided so as to connect various points, which are separated apart from one another in the marginal part of the connection region.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A packaged semiconductor device includes a carrier having a die attach surface, a semiconductor die mounted on the die attach surface and comprising first and second conductive terminals disposed on an upper side, a first clip that extends over the semiconductor die and is electrically connected to the first conductive terminal, a second clip that extends over the semiconductor die and is electrically connected to the second conductive terminal, and an electrically insulating encapsulant body that encapsulates the semiconductor die. An outer end of the first clip is exposed from the encapsulant body and provides a point of external electrical contact for the first conductive terminal. An outer end of the second clip is exposed from the same or a different side face of the encapsulant body as the first clip and provides a point of external electrical contact for the second conductive terminal.

A packaged semiconductor device includes a carrier having a die attach surface, a semiconductor die mounted on the die attach surface and comprising first and second conductive terminals disposed on an upper side, a first clip that extends over the semiconductor die and is electrically connected to the first conductive terminal, a second clip that extends over the semiconductor die and is electrically connected to the second conductive terminal, and an electrically insulating encapsulant body that encapsulates the semiconductor die. An outer end of the first clip is exposed from the encapsulant body and provides a point of external electrical contact for the first conductive terminal. An outer end of the second clip is exposed from the same or a different side face of the encapsulant body as the first clip and provides a point of external electrical contact for the second conductive terminal.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

A semiconductor package includes a die pad, a semiconductor die mounted on the die pad and comprising a first terminal facing away from the die pad and a second terminal facing and electrically connected to the die pad, an interconnect clip electrically connected to the first terminal, an encapsulant body of electrically insulating material that encapsulates the semiconductor die and the interconnect clip, and a first opening in the encapsulant body that exposes a surface of the interconnect clip, the encapsulant body comprises a lower surface, an upper surface opposite from the lower surface, and a first outer edge side extending between the lower surface and the upper surface, and the first opening is laterally offset from the first outer edge side.