The present disclosure is drawn to, among other things, a method of forming a semiconductor shield from a stock material having a thickness. In some aspects the methods includes providing a first layer of material on a first surface of the stock material, wherein at least a portion of the first layer of material includes a first window that exposes a portion of the first surface; providing a second layer of material on a second surface of the stock material, wherein the second surface of the stock material is spaced from the first surface by the thickness of the stock material, and wherein at least portion of the second layer of material includes a second window that exposes a portion of the second surface; and selectively removing a portion of the stock material exposed at the first or second windows, wherein the portion removed includes less than an entirety of the thickness of the stock material.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.

Provided is a method for manufacturing a semiconductor device which connects a first bond point and a second bond point by a wire. The method includes: a ball bonding step in which a crimping ball and a ball neck are formed at the first bond point by ball bonding; a thin-walled portion forming step in which a thin-walled portion having a reduced cross-sectional area is formed between the ball neck and the crimping ball; a wire tail separating step in which after a capillary is raised to unroll a wire tail, the capillary is moved in a direction to the second bond point, and the wire tail and the crimping ball are separated in the thin-walled portion; and a wire tail joining step in which the capillary is lowered and a side surface of the separated wire tail is joined onto the crimping ball.

The present disclosure is drawn to, among other things, a method of forming a semiconductor shield from a stock material having a thickness. In some aspects the methods includes providing a first layer of material on a first surface of the stock material, wherein at least a portion of the first layer of material includes a first window that exposes a portion of the first surface; providing a second layer of material on a second surface of the stock material, wherein the second surface of the stock material is spaced from the first surface by the thickness of the stock material, and wherein at least portion of the second layer of material includes a second window that exposes a portion of the second surface; and selectively removing a portion of the stock material exposed at the first or second windows, wherein the portion removed includes less than an entirety of the thickness of the stock material.

The present disclosure is drawn to, among other things, a method of forming a semiconductor shield from a stock material having a thickness. In some aspects the methods includes providing a first layer of material on a first surface of the stock material, wherein at least a portion of the first layer of material includes a first window that exposes a portion of the first surface; providing a second layer of material on a second surface of the stock material, wherein the second surface of the stock material is spaced from the first surface by the thickness of the stock material, and wherein at least portion of the second layer of material includes a second window that exposes a portion of the second surface; and selectively removing a portion of the stock material exposed at the first or second windows, wherein the portion removed includes less than an entirety of the thickness of the stock material.

A high-voltage energy storage module for supplying a voltage, in particular to a motor vehicle, includes at least two storage cells and at least one electrically conductive connection between two poles of different storage cells. The individual connection consists of multiple adjacently arranged bonding wires, and each bonding wire is secured to the two poles by means of a wire bonding.

A high-voltage energy storage module for supplying a voltage, in particular to a motor vehicle, includes at least two storage cells and at least one electrically conductive connection between two poles of different storage cells. The individual connection consists of multiple adjacently arranged bonding wires, and each bonding wire is secured to the two poles by means of a wire bonding.

A disclosed circuit arrangement includes adhesive transfer tape having a layer of pressure sensitive adhesive (PSA) having a first major surface and a second major surface opposite the first major surface. One or more metal foil pads are attached directly to the second major surface of the layer of PSA. Electrically conductive round wire is attached directly to the second major surface of the layer of PSA. The wire has a round cross-section and one or more portions directly connected to the one or more metal foil pads with one or more weld joints, respectively. An electronic device is attached directly to the second major surface of the layer of PSA and is electrically connected to the one or more portions of the round wire by one or more bond wires, respectively.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.